Surface instability and pattern formation by ion-induced erosion and mass redistribution

Surface instability and pattern formation by ion-induced erosion and mass redistribution
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离子引起的侵蚀和质量重新分布导致的表面不稳定性和图案形成

DOI:
10.1007/s00339-013-8170-9
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发表时间:
2014
期刊:
Applied Physics A
影响因子:
--
通讯作者:
H. Hofsäss
H. Hofsäss
中科院分区:
--
文献类型:
--
作者:
H. Hofsäss

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重新审视了曲率相关溅射和质量重新分布对离子诱导自组织形成周期性表面纳米图案的贡献。离子入射角相关的曲率系数和波纹波长是根据二元碰撞蒙特卡罗模拟获得的 3 维碰撞级联数据计算得出的。与卡特和维什尼亚科夫的模型以及基于陨石坑函数的模型相比,介绍了有关质量再分布的重大修改。此外,我发现曲率相关的侵蚀是图案形成的主要贡献,除了用重离子对轻基质进行非常低能量的照射之外。关于质量重新分布和离子引起的粘性流的主要修改与离子入射角相关的照射层厚度有关。一个较小的修改涉及放宽向内定向的质量重新分配。表面层中离子引起的粘性流也取决于层厚度,因此强烈依赖于角度。给出了模拟结果,并将其与各种已发表的实验结果进行了比较。模拟表明,在大多数情况下,曲率相关的侵蚀是表面不稳定性和波纹图案形成的主要贡献,并且还决定图案方向转变。模拟预测在较大离子入射角时会出现垂直波纹图案,与实验观察结果一致。质量重新分布导致表面在接近垂直的离子入射角下稳定,并且仅在非常低的离子能量下主导图案形成。
The contribution of curvature dependent sputtering and mass redistribution to ion-induced self-organized formation of periodic surface nanopatterns is revisited. Ion incidence angle-dependent curvature coefficients and ripple wavelengths are calculated from 3-dimensional collision cascade data obtained from binary collision Monte Carlo simulations. Significant modifications concerning mass redistribution compared to the model of Carter and Vishnyakov and also models based on crater functions are introduced. Furthermore, I find that curvature-dependent erosion is the dominating contribution to pattern formation, except for very low-energy irradiation of a light matrix with heavy ions. The major modifications regarding mass redistribution and ion-induced viscous flow are related to the ion incidence angle-dependent thickness of the irradiated layer. A smaller modification concerns the relaxation of inward-directed mass redistribution. Ion-induced viscous flow in the surface layer also depends on the layer thickness and is thus strongly angle dependent. Simulation results are presented and compared to a variety of published experimental results. The simulations show that in most cases curvature-dependent erosion is the dominant contribution to surface instability and ripple pattern formation and also determines the pattern orientation transition. The simulations predict the occurrence of perpendicular ripple patterns at larger ion incidence angles, in agreement with experimental observations. Mass redistribution causes stabilization of the surface at near-normal ion incidence angles and dominates pattern formation only at very low ion energies.
通过截面透射电子显微镜研究 keV 氩离子引起的 Si 表面波纹的结构
DOI: --
发表时间: 2003
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影响因子: --
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发表时间: 1996
期刊:
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发表时间: 2010-10-22
期刊: Materials (Basel, Switzerland)
影响因子: --
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