Room-temperature ferromagnetism in Mn-N Co-doped p-ZnO epilayers by metal-organic chemical vapor deposition
Room-temperature ferromagnetism in Mn-N Co-doped p-ZnO epilayers by metal-organic chemical vapor deposition
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金属有机化学气相沉积 Mn-N 共掺杂 p-ZnO 外延层的室温铁磁性
DOI：
10.1007/s00339-008-4444-z
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发表时间：
2008-03
影响因子：
2.7
通讯作者：
Tang, K.
中科院分区：
文献类型：
--
作者：
Sun, X.W.;Gu, S.L.;Ye, J.D.;Zheng, Y.D.;Liu, S.M.;Shan, Z.P.;Zhu, S.M.;Zhang, R.;Liu, W.;Tang, K.
通过金属有机化学气相沉积生长Mn-N共掺杂Zn外延层。 Mn-N共掺杂外延层表现出单相六方纤锌矿结构，表明共掺杂引起的晶格损伤较小。二次离子质谱分析表明Mn和N原子已原位并入ZnO外延层中。霍尔测量显示了从 N 单掺杂 ZnO 的 n 型到 Mn-N 共掺杂 ZnO 外延层的 p 型的传导转变。这种行为归因于共掺杂外延层中 Mn-N 相邻键的低形成能。 Mn掺杂导致N-H和N-N配合物的掺入量较低，这些配合物在N单掺杂外延层中含量丰富，并且始终充当空穴的补偿中心。此外，在上述共掺杂外延层上观察到了室温铁磁性，这可能是由于空穴介导了Mn原子的铁磁性有序性。
Mn-N co-doped Zn epilayers were grown by metal-organic chemical vapor deposition. The Mn-N co-doped epilayers exhibit single phase hexagonal wurtzite structure, indicative of the small lattice damage from co-doping. Secondary ion mass spectroscopy analysis indicates that Mn and N atoms have been in situ incorporated into the ZnO epilayer. Hall measurements exhibit the conduction transition from n-type of the N mono-doped ZnO to p-type of the Mn-N codoped ZnO epilayer. This behavior is attributed to the low formation energy of Mn-N neighboring bonds in the co-doped epilayers. Mn doping leads to the low incorporation of N-H and N-N complexes, which are abundant in the N mono-doped epilayer and always act as compensation centers of holes. Moreover, room temperature ferromagnetism has been observed on the above co-doped epilayer, which is possibly due to the hole mediation on the ferromagnetic ordering of Mn atoms.
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影响因子：
3.2
作者：
J. Luo;J. Liang;Quanlin Liu;Franklin Liu;Yuzhi Zhang;B. Sun;G. Rao
通讯作者：
J. Luo;J. Liang;Quanlin Liu;Franklin Liu;Yuzhi Zhang;B. Sun;G. Rao
影响因子：
4
作者：
Jiandong Ye;S. Gu;S. M. Zhu;S. Liu;Youliao Zheng;R. Zhang;Yue-chun Shi;Qingchao Chen;H. Yu;Y. Ye
通讯作者：
Jiandong Ye;S. Gu;S. M. Zhu;S. Liu;Youliao Zheng;R. Zhang;Yue-chun Shi;Qingchao Chen;H. Yu;Y. Ye
影响因子：
1.8
作者：
Ye, JD;Gu, SL;Ye, YD
通讯作者：
Ye, YD
影响因子：
4
作者：
Wang, J. B.;Huang, G. J.;Liu, E. H.
通讯作者：
Liu, E. H.
影响因子：
8.6
作者：
P. Fons;H. Tampo;A. Kolobov;M. Ohkubo;S. Niki;J. Tominaga;R. Carboni;F. Boscherini;S. Friedrich
通讯作者：
P. Fons;H. Tampo;A. Kolobov;M. Ohkubo;S. Niki;J. Tominaga;R. Carboni;F. Boscherini;S. Friedrich