Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy
Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy
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紫外光辅助开尔文探针力显微镜表征 GaN 凹坑缺陷附近的载流子行为
DOI：
10.1007/s11433-018-9320-x
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发表时间：
2019-01
期刊：
影响因子：
--
通讯作者：
Dabing Li
中科院分区：
文献类型：
--
作者：
Cuihong Kai;Xiaojuan Sun;Yuping Jia;Zhiming Shi;Ke Jiang;Jianwei Ben;You Wu;Yong Wang;Henan Liu;Xiaohang Li;Dabing Li
使用紫外光辅助开尔文探针力显微镜（KPFM）系统地研究了外延GaN表面的V型坑（锥底）和U型坑（钝底）附近的表面电势。建立了能带结构模型。
Surface potentials in the vicinity of V-pits (cone bottom) and U-pits (blunt bottom) on epitaxial GaN surface have been systematically studied using ultraviolet (UV) light-assisted Kelvin probe force microscopy (KPFM). The band structure models are established to understand variation of the surface potentials at the pits and planar surface with and without UV light. The photo-generated carrier behavior at the pit defects is studied. According to the surface potential results, it can be deduced that the carrier distributions around the V- and U-pits are uneven. In dark, the electron concentration at the bottom of V-pit (30n0) and Upit (15n0) are higher than that at planar surface (n0). Under UV light, for V-pit, the electron concentration at the cone bottom (4.93×1011n0) is lower than that at the surrounding planar surface (5.68×1013n0). For U-pit, the electron concentration at the blunt bottom is 1.35×1012n0, which is lower than that at the surrounding planar surface (6.13×1013n0). The non-equilibrium electron concentrations at different locations are calculated. Based on the non-equilibrium electron concentration, it can be concluded that the carrier recombination rate at pit defects is higher than that at planar surface.
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