Carrier Dynamics Determined by Carrier-Phonon Coupling in InGaN/GaN Multiple Quantum Well Blue Light Emitting Diodes
Carrier Dynamics Determined by Carrier-Phonon Coupling in InGaN/GaN Multiple Quantum Well Blue Light Emitting Diodes
复制标题
InGaN/GaN 多量子阱蓝光发射二极管中的载流子-声子耦合确定的载流子动力学
DOI：
10.1088/0256-307x/36/2/028501
复制
发表时间：
2019-01
影响因子：
3.5
通讯作者：
Jiang Feng Yi
中科院分区：
文献类型：
--
作者：
Cao Sheng;Wu Xiao Ming;Liu Jun Lin;Jiang Feng Yi
研究了InGaN/GaN多量子阱蓝光发光二极管电致发光（EL）谱中的声子边带。在100-150 K温度范围内，观察到零声子和一阶声子辅助发光线之间的能量间距（ES）与注入电流的S形关系。在100 ~ 150 K温度范围内，S形随温度的升高而被抑制，在200 K以上时消失。低温下ES的S形注入依赖性可以通过与局域态相关的载流子动力学的三个阶段来解释：（i）载流子从浅局域态到深局域态的弛豫，（ii）浅局域态和深局域态的能带填充，以及（iii）载流子从深局域态到浅局域态和更高能量态的溢出。这三个阶段表现出强烈的温度依赖性。提出载流子寿命随温度的快速变化是抑制S形特征的原因。所提出的机制揭示了载流子复合动力学的InGaN/GaN多量子阱在不同的注入电流密度和温度的EL。
Phonon sidebands in the electrolumiescence (EL) spectra of InGaN/GaN multiple quantum well blue light emitting diodes are investigated. S-shaped injection current dependence of the energy spacing (ES) between the zero-phonon and first-order phonon-assisted luminescence lines is observed in a temperature range of 100–150 K. The S-shape is suppressed with increasing temperature from 100 to 150 K, and vanishes at temperature above 200 K. The S-shaped injection dependence of ES at low temperatures could be explained by the three stages of carrier dynamics related to localization states: (i) carrier relaxation from shallow into deep localization states, (ii) band filling of shallow and deep localization states, and (iii) carrier overflow from deep to shallow localization states and to higher energy states. The three stages show strong temperature dependence. It is proposed that the fast change of the carrier lifetime with temperature is responsible for the suppression of S-shaped feature. The proposed mechanisms reveal carrier recombination dynamics in the EL of InGaN/GaN MQWs at various injection current densities and temperatures.
登录
查看更多内容
DOI：
10.1016/s0921-5107(02)00024-7
发表时间：
2002-05
影响因子：
3.6
作者：
R. Pecharromán-Gallego;P. Edwards;R. Martin;I. Watson
通讯作者：
R. Pecharromán-Gallego;P. Edwards;R. Martin;I. Watson
影响因子：
3.6
作者：
Chuanbing Xiong;F. Jiang;Wenqing Fang;Li Wang;Chunnan Mo;Hechu Liu
通讯作者：
Chuanbing Xiong;F. Jiang;Wenqing Fang;Li Wang;Chunnan Mo;Hechu Liu
影响因子：
3.2
作者：
Xiaoming Wu;Junlin Liu;Chuanbing Xiong;Jianli Zhang;Z. Quan;Qinghua Mao;F. Jiang
通讯作者：
Xiaoming Wu;Junlin Liu;Chuanbing Xiong;Jianli Zhang;Z. Quan;Qinghua Mao;F. Jiang
绿色 InGaN/GaN 多量子阱中的复合路径
影响因子：
--
作者：
Lin, Tao;Kuo, Hao Chung;Feng, Zhe Chuan
通讯作者：
Feng, Zhe Chuan
影响因子：
4
作者：
M. Smith;J. Lin;Hongxing Jiang;A. Khan;Q. Chen;A. Salvador;A. Botchkarev;W. Kim;H. Morkoç-
通讯作者：
M. Smith;J. Lin;Hongxing Jiang;A. Khan;Q. Chen;A. Salvador;A. Botchkarev;W. Kim;H. Morkoç-