Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron.
Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron.
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基于镧和主族元素硼的化合物的室温制造薄膜晶体管
DOI：
10.3390/molecules23061373
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发表时间：
2018-06-06
期刊：
影响因子：
--
通讯作者：
Liu B
中科院分区：
文献类型：
--
作者：
Xiao P;Huang J;Dong T;Xie J;Yuan J;Luo D;Liu B
首次研究了含有主要族元素硼（LaBx）的镧的化合物作为薄膜晶体管（TFT）的有源层。详细的研究表明，室温下制备的LaBx薄膜处于晶态，具有相对较窄的光学带隙为2.28 eV。溅射过程中La/B的原子比与工作气压有关，随着工作气压的升高，La/B的原子比增大，从而使LaBx薄膜中的自由电子增多。没有任何有意退火步骤的LaBx-TFT表现出0.44 cm 2·V-1·s-1的饱和迁移率，这是0.26 V/decade的亚阈值摆幅（SS）和大于104的Ion/Ioff比。室温工艺因其与几乎所有柔性衬底的兼容性而具有吸引力，LaBx半导体可能成为薄膜晶体管沟道材料的新选择。
For the first time, compounds with lanthanum from the main family element Boron (LaBx) were investigated as an active layer for thin-film transistors (TFTs). Detailed studies showed that the room-temperature fabricated LaBx thin film was in the crystalline state with a relatively narrow optical band gap of 2.28 eV. The atom ration of La/B was related to the working pressure during the sputtering process and the atom ration of La/B increased with the increase of the working pressure, which will result in the freer electrons in the LaBx thin film. LaBx-TFT without any intentionally annealing steps exhibited a saturation mobility of 0.44 cm2·V−1·s−1, which is a subthreshold swing (SS) of 0.26 V/decade and a Ion/Ioff ratio larger than 104. The room-temperature process is attractive for its compatibility with almost all kinds of flexible substrates and the LaBx semiconductor may be a new choice for the channel materials in TFTs.
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