Wafer-scale porous GaN single crystal substrates and their application in energy storage
Wafer-scale porous GaN single crystal substrates and their application in energy storage
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晶圆级多孔GaN单晶衬底及其在储能中的应用
DOI：
10.1039/c6ce00741d
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发表时间：
2016-07
期刊：
影响因子：
3.1
通讯作者：
Suwen Liu
中科院分区：
文献类型：
--
作者：
Jiaoxian Yu;Lei Zhang;Jianxing Shen;Zhiliang Xiu;Suwen Liu
多孔GaN由于其高的比表面积、禁带宽度的变化以及高效的发光性能而引起了人们的广泛关注。然而，迄今为止获得的多孔GaN材料主要通过电化学蚀刻或光电化学蚀刻方法来制造。在这里，我们报告的晶圆级（2英寸）多孔GaN的制造一种新颖的和简单的高温退火工艺。基于扫描电子显微镜和GaN晶面的稳定性，提出了一个模型来解释多孔GaN的形成机制。HRXRD、PL和拉曼光谱结果证实了多孔GaN的晶体质量改善、光学质量增强和应变弛豫。组装了基于多孔GaN电极的三电极系统。良好的电容行为和上级电化学可逆性验证了多孔GaN基超级电容器的概念，并指出其在储能应用中的潜力。
Porous GaN has recently attracted much interest due to its high surface area, shift of bandgap and efficient luminescence. However, the porous GaN materials obtained so far are mainly fabricated via an electrochemical etching or a photoelectrochemical etching method. Here, we report the fabrication of wafer-scale (2 inch) porous GaN by a novel and simple high temperature annealing process. A model is proposed, based on scanning electron microscopy as well as the stabilities of the GaN crystallographic plane, to explain the formation mechanism of the porous GaN. Improvement of the crystal quality, enhancement of the optical quality and strain relaxation of porous GaN are confirmed by the HRXRD, PL and Raman spectroscopy results. A three-electrode system based on the porous GaN electrodes is assembled. The good capacitive behavior and superior electrochemical reversibility validate the concept of porous GaN-based supercapacitors and point to their potential in energy storage applications.
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影响因子：
4
作者：
C. Yerino;Yu Zhang;B. Leung;M. Lee;T. Hsu;Chunyan Wang;W. Peng;Jung Han
通讯作者：
C. Yerino;Yu Zhang;B. Leung;M. Lee;T. Hsu;Chunyan Wang;W. Peng;Jung Han
影响因子：
3.2
作者：
T. Tansley;C. Foley
通讯作者：
T. Tansley;C. Foley
DOI：
10.1016/j.physe.2005.03.007
发表时间：
2005-07
影响因子：
3.3
作者：
A. Vajpeyi;S. Tripathy;S. Chua;E. Fitzgerald
通讯作者：
A. Vajpeyi;S. Tripathy;S. Chua;E. Fitzgerald
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影响因子：
29.4
作者：
Jia, Haiqiang;Guo, Liwei;Chen, Hong
通讯作者：
Chen, Hong
影响因子：
56.9
作者：
Lin, VSY;Motesharei, K;Ghadiri, MR
通讯作者：
Ghadiri, MR