The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD
The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD
复制标题
电感耦合等离子体CVD沉积硅薄膜的光电特性
DOI：
10.1016/j.apsusc.2010.07.071
复制
发表时间：
2010-11
影响因子：
6.7
通讯作者：
中科院分区：
文献类型：
--
作者：
采用电感耦合等离子体化学气相沉积（ICP-CVD）技术，以H2稀释的SiH 4为源气体，在较低的衬底温度下制备了氢化非晶硅和微晶硅薄膜。电感耦合激发产生的高密度等离子体有利于硅薄膜在低温下晶化，在衬底温度低至180°C时获得了微晶硅薄膜。随着薄膜结晶度的提高，薄膜的柱状结构变得越来越致密。随着衬底温度的升高，薄膜中氢含量的减少导致光学带隙变窄，吸收增强。微晶硅薄膜的电子输运机制有两种：一种是在室温附近的温度范围内与态密度分布有关，另一种是在170 K以下费米能级附近的局域电子态之间的变程跳跃。对硅薄膜的微结构对光电性能的影响给出了合理的解释。在300°C的衬底温度下制备的薄膜具有高度结晶和致密的柱状结构，高的光吸收系数和电导率，以及3.8%的低氢含量。
Hydrogenated amorphous and microcrystalline silicon films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at low substrate temperatures using H2-diluted SiH4as a source gas. High-density plasma generated by inductively coupled excitation facilitates the crystallization of silicon films at low temperatures, and microcrystalline silicon films were obtained at the substrate temperature as low as 180°C. The columnar structure of the films becomes more and more compact with an increase of their crystallinity. The reduction of hydrogen content in the films causes a narrowing of the optical bandgap and an enhancement of the absorption with increasing the substrate temperature. The microcrystalline silicon films show two electronic transport mechanisms: one is related to the density of state distribution in the temperature region near room temperature and the other is the variable range hopping between localized electronic states close to the Fermi level below 170K. A reasonable explanation is presented for the dependence of the optoelectronic properties on the microstructure of the silicon films. The films prepared at a substrate temperature of 300°C have highly crystalline and compact columnar structure, high optical absorption coefficient and electrical conductivity, and a low hydrogen content of 3.8%.
登录
查看更多内容
影响因子：
1.8
作者：
N. Mott
通讯作者：
N. Mott
影响因子：
2.1
作者：
Fanhan Liu;M. Zhu;Yongchun Feng;Yan-bing Han;Junwen Liu
通讯作者：
Fanhan Liu;M. Zhu;Yongchun Feng;Yan-bing Han;Junwen Liu
影响因子：
3.5
作者：
N. Imajyo
通讯作者：
N. Imajyo
DOI：
10.1080/00107517308210764
发表时间：
1973-09
期刊：
--
影响因子：
--
作者：
N. F. Mott
通讯作者：
N. F. Mott
影响因子：
2.1
作者：
C. Niikura;N. Itagaki;M. Kondo;Y. Kawai;A. Matsuda
通讯作者：
C. Niikura;N. Itagaki;M. Kondo;Y. Kawai;A. Matsuda