Influence of Buried Oxide Si+ Implantation on TID and NBTI effects for PDSOI MOSFETs
Influence of Buried Oxide Si+ Implantation on TID and NBTI effects for PDSOI MOSFETs
复制标题
埋入氧化物硅注入对 PDSOI MOSFET TID 和 NBTI 效应的影响
DOI：
10.1109/tns.2021.3049284
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发表时间：
2021-02
影响因子：
1.8
通讯作者：
Yun Huang
中科院分区：
文献类型：
--
作者：
Chao Peng;Yunfei En;Zhifeng Lei;Rui Gao;Zhangang Zhang;Yujuan He;Yiqiang Chen;Yun Huang
研究了硅离子注入硬化片和未硬化片上制备的130 nm PDSOI MOSFET的总电离剂量（TID）效应和负偏置温度不稳定性（NBTI）效应。采用Si ~+注入埋氧层的方法，获得了1 Mrad（Si）的TID硬化PDSOI MOSFET。硅离子注入在埋氧层中引入的电子陷阱有利于硬化。虽然辐射硬化工艺对辐照前器件的标称电气特性几乎没有影响，但它会影响NBTI可靠性，表现为辐射硬化器件NBTI寿命的降低。得到了NBTI应力作用下正电荷的能量分布。结果表明，在辐照加固器件的栅氧化层/硅界面附近存在更多的损伤相关陷阱，这些陷阱加速了NBTI应力期间的阈值电压漂移。低频噪声特性也验证了这一结论。
The total ionization dose (TID) effect and negative bias temperature instability (NBTI) effect of 130 nm PDSOI MOSFETs fabricated on hardened wafer with silicon ion implantation and unhardened wafer are investigated. A TID hardened PDSOI MOSFET up to 1 Mrad(Si) is obtained by Si+ implantation in buried oxide. The hardening is benefit from the electron traps in the buried oxide introduced by Si+ Implantation. Although, the radiation hardening process has rare impact on nominal electrical characteristics of the device before irradiation, it will affect the NBTI reliability, which is manifested as the decrease of the NBTI lifetime for the radiation hardened devices. The energy distribution of positive charges built up during NBTI stress is obtained. It proves that more damage-related traps exist near the gate oxide/silicon interface for the radiation hardened device, which accelerate the threshold voltage shift during the NBTI stress. This conclusion is also verified by the low frequency noise characteristics.
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影响因子：
1.8
作者：
Schwank, JR;Ferlet-Cavrois, V;Dodd, PE
通讯作者：
Dodd, PE
影响因子：
1.9
作者：
Yi Wanbing;E. Zhang;Man Chen;Ning Li;Guoqiang Zhang;Zhilu Liu;Xin Wang
通讯作者：
Yi Wanbing;E. Zhang;Man Chen;Ning Li;Guoqiang Zhang;Zhilu Liu;Xin Wang
影响因子：
1.8
作者：
Huixiang Huang;Dawei Bi;Ming Chen;Yanwei Zhang;Xing Wei;Zhiyuan Hu;Zhengxuan Zhang
通讯作者：
Huixiang Huang;Dawei Bi;Ming Chen;Yanwei Zhang;Xing Wei;Zhiyuan Hu;Zhengxuan Zhang
DOI：
10.1116/1.2839858
发表时间：
2008-02
期刊：
Journal of Vacuum Science and Technology
影响因子：
--
作者：
E. Zhang;Zhishui Yu;Yanggen Cao;Hui Yang;Zhengxuan Zhang;Xi Wang
通讯作者：
E. Zhang;Zhishui Yu;Yanggen Cao;Hui Yang;Zhengxuan Zhang;Xi Wang
影响因子：
3.5
作者：
D. Fleetwood;W. L. Warren;M. Shaneyfelt;R. Devine;J. Scofield
通讯作者：
D. Fleetwood;W. L. Warren;M. Shaneyfelt;R. Devine;J. Scofield