The influence of film thickness and process temperature on c-axis orientation of Bi3TiTaO9 thin films
The influence of film thickness and process temperature on c-axis orientation of Bi3TiTaO9 thin films
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膜厚和工艺温度对Bi3TiTaO9薄膜c轴取向的影响
DOI：
10.1007/s10971-006-0202-x
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发表时间：
2007-06
影响因子：
2.5
通讯作者：
Liu, Litian
中科院分区：
文献类型：
--
作者：
Ren, Tianling;Zhang, Zhigang;Xie, Dan;Liu, Litian
采用化学溶液沉积（CSD）技术在不同的退火温度下，在 Pt(111)/TiO2/SiO2/(100)Si 衬底上成功制备了不同厚度（范围从 100 至 400 nm）的双层铁电 Bi3TiTaO9 (BTT) 薄膜。薄膜的c轴取向受薄膜厚度和工艺温度的影响。薄膜越薄、工艺温度越高，c轴取向越高。随着薄膜厚度的增加，应力减小，但薄膜粗糙度增大，导致薄膜的c轴取向降低。研究发现，与在 650 和 750°C 退火的薄膜相比，在 800°C 退火的 BTT 薄膜的剩余极化 (Pr) 大大提高。测得的 Pr 和矫顽场 (Ec) 值分别为 2 µC/cm2 和 100 kV/cm。 BTT 薄膜表现出明确的铁电特性，晶粒尺寸大于 100 nm。
Bi-layered ferroelectric Bi3TiTaO9 (BTT) thin films with different thickness (ranging from 100 to 400 nm) were successfully fabricated on Pt(111)/TiO2/SiO2/(100)Si substrates using chemical solution deposition (CSD) technique at different annealing temperatures. The c-axis orientation of the films was affected by film thickness and process temperature. The thinner the film and the higher the process temperature, the higher the c-axis orientation. With the increase of film thickness, the stress decreased but the film roughness increased, which led to the decrease of c-axis orientation of films. BTT films annealed at 800°C were found to have much improved remament polarization (Pr) than that of films annealed at 650 and 750°C. The Pr and coercive field (Ec) values were measured to be 2 μC/cm2 and 100 kV/cm, respectively. BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.
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影响因子：
4
作者：
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通讯作者：
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影响因子：
64.8
作者：
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