Effect of Sputtering Power on the Structural and Optical Properties of Inn Nanodots on Al2O3 by Magnetron Sputtering
Effect of Sputtering Power on the Structural and Optical Properties of Inn Nanodots on Al2O3 by Magnetron Sputtering
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磁控溅射 Al2O3 上溅射功率对 Inn 纳米点结构和光学性能的影响
DOI：
10.1590/1980-5373-mr-2019-0380
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发表时间：
2019
影响因子：
1.7
通讯作者：
Wang Hui
中科院分区：
文献类型：
--
作者：
Zhang Ziming;Li Jingjie;Zhou Yijian;Fu Hongyuan;Zhang Zixu;Xiang Guojiao;Zhao Yang;Zhuang Shiwei;Yang Fan;Wang Hui
本文报道了溅射功率对在Al2O3衬底上磁控溅射制备的InN纳米点结构、光学和电学性能的影响。结果表明：随着溅射功率的增大，生长的InN薄膜呈现出均匀的纳米点形貌，且InN纳米颗粒尺寸增大；InN纳米点表现出高度的c轴取向，主要是InN（002）衍射。随着溅射功率的增大，InN样品的光学带隙呈减小趋势。此外，通过霍尔效应详细讨论了InN样品的电学性质，载流子浓度和迁移率分别可以在3.233×1019 ~ 1.655×1020 cm-3和1.151 ~ 10.101 cm2/v•s范围内调节。这些结果将为InN材料在气体传感器和发光二极管领域的应用奠定良好的基础。在20厘米处。在正式溅射前，对靶材进行预溅射5分钟，以去除靶材表面的污染物。然后将溅射控制在1小时。在上述实验条件下，分别将溅射功率设置为80、90、100和110 W，制备了标记为A-D的InN样品。
In this work, we reported the effects of sputtering power on the structure, optical and electrical properties of InN nanodots prepared on Al2O3 substrate by magnetron sputtering.The results showed that the as-grown InN films exhibited uniform nanodot morphology and the size of the InN nano grains increased with the sputtering power was increased. The InN nanodot exhibited highly c-axis prefered orientation with mainly InN (002) diffraction. The optical band gap of InN samples showed an decreasing trend with the increase in sputteirng power. Moreover, the electrical properties of the InN samples were discussed in detail by hall effect and the carrier concentration and mobility could be adjusted from 3.233×1019 to 1.655×1020 cm-3 and 1.151 to 10.101 cm2/v•s, respectively. These results will lay a good fundation for the applicaion of InN material in the field of gas sensers and light emitting diodes. at 20 sccm. Before formal sputtering, the target was under presputter for 5 minutes to remove the contaminants on the target surface. Then the sputtering was controlled at 1 hour. Under the above experimental conditions, InN samples marked A-D were prepared by setting the sputtering power at 80, 90, 100 and 110 W, respectively.
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影响因子：
3.2
作者：
Arun Malla Chowdhury;R. Pant;B. Roul;D. Singh;K. Nanda;S. .. Krupanidhi
通讯作者：
Arun Malla Chowdhury;R. Pant;B. Roul;D. Singh;K. Nanda;S. .. Krupanidhi
影响因子：
4
作者：
Wu, J;Walukiewicz, W;Jakiela, R
通讯作者：
Jakiela, R
影响因子：
1.8
作者：
S. Valdueza-Felip;F. Naranjo;M. González-Herráez;L. Lahourcade;E. Monroy;S. Fernández
通讯作者：
S. Valdueza-Felip;F. Naranjo;M. González-Herráez;L. Lahourcade;E. Monroy;S. Fernández
不同溅射温度磁控溅射生长定向良好的 InN 纳米点
影响因子：
1.4
作者：
Wang, Hui;Zhao, Yang;Yang, Fan
通讯作者：
Yang, Fan
影响因子：
3.7
作者：
Wu, J;Walukiewicz, W;Schaff, WJ
通讯作者：
Schaff, WJ