Exploiting Carbon Nanotube FET and Magnetic Tunneling Junction for Near-Memory-Computing Paradigm
Exploiting Carbon Nanotube FET and Magnetic Tunneling Junction for Near-Memory-Computing Paradigm
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利用碳纳米管 FET 和磁隧道结实现近内存计算范式
DOI：
10.1109/ted.2021.3059817
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发表时间：
2021-04
影响因子：
3.1
通讯作者：
Zhao Weisheng
中科院分区：
文献类型：
--
作者：
Yang Nan;Wang Xinhe;Lin Xiaoyang;Zhao Weisheng
随着物联网(IoT)和智能化发展对计算速度和能效的要求越来越高，传统的基于金属氧化物场效应管(MOSFET)的冯·诺依曼计算体系结构已经越来越不能满足需求。与目前的硅基FET相比，碳纳米管场效应晶体管(CNTFET)有望实现显著的能效效益。本文将CNTFET和自旋转移扭矩磁隧道结(STT-MTJ)相结合，构建了近记忆计算电路，通过对三个非易失性逻辑门的研究表明，CNTFET/STT-MTJ非易失性逻辑电路的读取速度约为MOSFET/STT-MTJ模拟电路的40%，同一逻辑电路的总功耗和读取能量与MOSFET/STT-MTJ模拟电路相比可节省约17%-37%。我们的研究显示了CNTFET和STT-MTJ在非易失性逻辑电路中集成的优势，这对超互补金属氧化物半导体(CMOS)电子学的发展具有重要意义。
The traditional von Neumann computing architecture based on metal-oxide field-effect-transistors (MOSFETs) is more and more incompetent for the increasing demand for computing speed and energy efficiency in the Internet of Things (IoT) and intelligent development. Carbon nanotube field-effect-transistors (CNTFETs) are expected to achieve significant energy efficiency benefits versus today’s silicon-based FETs. In this article, we combine CNTFETs and spin-transfer torque magnetic tunneling junctions (STT-MTJs) to build near-memory computing circuits, whose high speed and low power consumption characteristics are shown through the investigation of three nonvolatile logic gates: The read speed of CNTFET/STT-MTJ nonvolatile logic circuit is approximately 40% of the MOSFET/ STT-MTJ analog circuit, and the total power consumption and read energy of the same logic circuit can be approximately saved 17%–37% compared with that of MOSFET/ STT-MTJ analog circuit. Our research shows the advantages of the integration of CNTFETs and STT-MTJs in the nonvolatile logic circuit, which has great significance for the development of beyond-complementary metal-oxide semiconductor (CMOS) electronics.
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影响因子：
2.4
作者：
S. Hasan;S. Salahuddin;M. Vaidyanathan;M. A. Alam
通讯作者：
S. Hasan;S. Salahuddin;M. Vaidyanathan;M. A. Alam
DOI：
10.1109/mwsym.2013.6697679
发表时间：
2013-06
期刊：
2013 IEEE MTT-S International Microwave Symposium Digest (MTT)
影响因子：
--
作者：
M. Schroter;M. Haferlach;P. Sakalas;M. Claus
通讯作者：
M. Schroter;M. Haferlach;P. Sakalas;M. Claus
DOI：
10.1109/tcsii.2014.2362713
发表时间：
2015
期刊：
IEEE Transactions on Circuits and Systems II: Express Briefs
影响因子：
--
作者：
Meng-Fan Chang;Shu-Meng Yang;Chia-Chen Kuo;T. Yang;Che-Ju Yeh;Tun-Fei Chien;Li-Yue Huang;S. Sheu;P. Tseng;Yu-Sheng Chen;Frederick T. Chen;T. Ku;M. Tsai;M. Kao
通讯作者：
Meng-Fan Chang;Shu-Meng Yang;Chia-Chen Kuo;T. Yang;Che-Ju Yeh;Tun-Fei Chien;Li-Yue Huang;S. Sheu;P. Tseng;Yu-Sheng Chen;Frederick T. Chen;T. Ku;M. Tsai;M. Kao
影响因子：
2.4
作者：
Nishil Talati;Saransh Gupta;P. Mane;Shahar Kvatinsky
通讯作者：
Nishil Talati;Saransh Gupta;P. Mane;Shahar Kvatinsky
影响因子：
1.1
作者：
M. Eron;S. Lin;D. Wang;M. Schroter;P. Kempf
通讯作者：
M. Eron;S. Lin;D. Wang;M. Schroter;P. Kempf