Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping
Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping
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通过硅掺杂提高 InAs/GaAs 量子点太阳能电池的效率
DOI：
10.1016/j.solmat.2013.02.005
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发表时间：
2013-06
影响因子：
6.9
通讯作者：
Zhanguo Wang
中科院分区：
文献类型：
--
作者：
Haiqiao Ni;Xiaodong Wang;Tao Yang;Zhanguo Wang
本文报道了在量子点（QD）生长过程中，通过在InAs量子点中直接掺杂Si，可以显著提高InAs/GaAs量子点（QD）太阳能电池的效率。采用分子束外延的方法制备了含有5个堆叠量子点的器件。结果表明，采用适当的硅化硅可以将器件的开路电压提高到0.84V。这大大高于使用相同结构的未掺杂器件获得的0.67V值。相应器件的效率由11.3%提高到17.0%。这种效率的提高是由于由于掺杂降低了堆叠的InAs/GaAs QD层中的缺陷密度，从而大大降低了器件中的能量损失。
This paper reports on significantly improved efficiency of InAs/GaAs quantum dot (QD) solar cells by directly doping Si into InAs QDs during the QD growth. The devices which contain five stacked QDs in their i-regions were grown using molecular beam epitaxy. It is shown that using appropriate Si-doing, the open-circuit voltage of the device can be increased to 0.84V. This is dramatically higher than the value of 0.67V obtained in undoped device using the same structure. Moreover, the efficiency of corresponding device is improved from 11.3% to 17.0%. This improvement in efficiency is attributed to greatly reduced energy loss in the devices that results from the reduction of the defect density in the stacked InAs/GaAs QD layers due to the doping.
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不同掺杂浓度的 InAs/GaAs 量子点内 Si δ 掺杂
DOI：
10.1116/1.4732462
发表时间：
2012-07
期刊：
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
影响因子：
--
作者：
Wang, Ke-Fan;Gu, Yongxian;Yang, Xiaoguang;Yang, Tao;Wang, Zhanguo
通讯作者：
Wang, Zhanguo
影响因子：
3.1
作者：
Albert Lin;J. Phillips
通讯作者：
Albert Lin;J. Phillips
影响因子：
4
作者：
Laghumavarapu, R. B.;El-Emawy, M.;Huffaker, D. L.
通讯作者：
Huffaker, D. L.
影响因子：
2.1
作者：
Marti, A.;Antolin, E.;Farmer, C. D.
通讯作者：
Farmer, C. D.
影响因子：
8.6
作者：
CARGILL, GS;ANGILELLO, J;KAVANAGH, KL
通讯作者：
KAVANAGH, KL