Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment
Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment
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通过氮化处理改变多层 MoS2/Al2O3 异质结的能带排列
DOI：
10.1016/j.jallcom.2019.04.227
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发表时间：
2019-07
影响因子：
6.2
通讯作者：
Dabing Li
中科院分区：
文献类型：
--
作者：
Xinke Liu;Kuilong Li;Xiaojuan Sun;Zhiming Shi;Zhonghui Huang;Zhiwen Li;Long Min;Venkatadivakar Botcha;Xingyuan Chen;Xiangfu Xu;Dabing Li
界面工程在二维材料/高κ氧化物异质结器件中起着决定性的作用。本文利用X射线光电子能谱研究了NH3等离子体界面处理对MoS_2/Al_2O_3多层异质结能带排列的影响。形成了一种Ⅰ能带排列，其价带偏移和导带偏移分别约为3.67 eV和2.33 eV。等离子体处理后，CBO增大了约0.45 eV，这主要是由于Al2p核心能级能量与价带最大值之间的分离增加所致。这一有趣的发现为多层MoS2在电子器件中的界面能带调节和进一步的应用提供了重要的指导。
Interface engineering plays a decisive role in the two-dimensional material/high-κ oxide heterojunction-based devices. In this work, the effects of NH3plasma interface treatment on the energy band alignment at multilayer MoS2/Al2O3heterostructures were explored using x-ray photoelectron spectroscopy. A type-Ⅰ band alignment was formed with valence band offset (VBO) and conduction band offset (CBO) about 3.67 eV and 2.33 eV, respectively. Significantly, the CBO was enlarged by about 0.45 eV after the plasma treatment, which was mainly attributed to the increased separation between the Al 2p core-level energy and valence band maximum. This interesting finding provides a significant guidance for the band adjustment at the interface and further applications of multilayer MoS2in electronic devices.
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影响因子：
3.2
作者：
Malleswararao Tangi;Jithesh Kuyyalil;S. M. Shivaprasad
通讯作者：
Malleswararao Tangi;Jithesh Kuyyalil;S. M. Shivaprasad
影响因子：
4
作者：
J. Tao;J. Chai;Z. Zhang;J. S. Pan;S. J. Wang
通讯作者：
J. Tao;J. Chai;Z. Zhang;J. S. Pan;S. J. Wang
影响因子：
29.4
作者：
Choi, Woong;Cho, Mi Yeon;Kim, Sunkook
通讯作者：
Kim, Sunkook
影响因子：
17.1
作者：
Yin, Zongyou;Li, Hai;Zhang, Hua
通讯作者：
Zhang, Hua
影响因子：
4
作者：
Laskar, Masihhur R.;Ma, Lu;Rajan, Siddharth
通讯作者：
Rajan, Siddharth