Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion
Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion
复制标题
基于等离子体刺激室温扩散,将 B、Mg、Ni、Cu、Mn、Cr 和 Fe 超浅掺杂到具有极高表面浓度的 SiC 中
DOI:
10.1007/s11665-018-3782-z
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发表时间:
2018-12
影响因子:
2.3
通讯作者:
Qin G G
中科院分区:
文献类型:
--
作者:
Hou Ruixiang;Li Lei;Fang Xin;Zhao Hui;Chen Yihang;Xie Ziang;Sun Guosheng;Zhang Xinhe;Zhao Yanfei;Huang Rong;Huang Zengli;He Youqin;Ma Nongnong;Zhang Jicai;Xu Wanjing;Yang Jinbo;Xiao Chijie;Qin G G
Very recently, we reported a novel doping method called plasma doping without any external bias (PDWOEB) for the introduction of some impurities into Si and GaN at room temperature (RT). In this work, the RT doping of some impurities, including B, Mg, Ni, Cu, Mn, Cr and Fe, into SiC with ultra-shallow depths of tens of nanometer and very high surface concentrations, approaching or exceeding 1E20/cm3, by using PDWOEB is reported. It has been found for the first time that the doping depths and surface concentrations of these impurities doped into SiC by the PDWOEB increase drastically with increasing doping time and the ferromagnetism of SiC due to Ni doping is demonstrated. Moreover, the approximate diffusivities of B, Mg, Ni, Cu, Mn, Cr and Fe in SiC at RT under plasma stimulation are obtained. The physical mechanism of PDWOEB is further discussed, and some unclear viewpoints are clarified.
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影响因子:
2.7
作者:
Hou Ruixiang;Fang Xin;Li Lei;Li Shuti;Song Weidong;Xie Xixi;Xie Ziang;Xu Wanjing;Pan Shuan;Li Dan;Xiao Chijie;Qin G. G.
通讯作者:
Qin G. G.
DOI:
10.1002/1521-396x(199707)162:1
发表时间:
1997-07
期刊:
Physica Status Solidi (a)
影响因子:
--
作者:
R. Devaty;W. J. Choyke
通讯作者:
R. Devaty;W. J. Choyke
影响因子:
1.7
作者:
S. Oswald;H. Wirth
通讯作者:
S. Oswald;H. Wirth
影响因子:
3.7
作者:
J. Weeks;J. Tully;L. Kimerling
通讯作者:
J. Weeks;J. Tully;L. Kimerling
DOI:
10.1017/cbo9781139207249.009
发表时间:
2012
期刊:
--
影响因子:
--
作者:
W. Marsden
通讯作者:
W. Marsden