Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion

Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion
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基于等离子体刺激室温扩散,将 B、Mg、Ni、Cu、Mn、Cr ​​和 Fe 超浅掺杂到具有极高表面浓度的 SiC 中

DOI:
10.1007/s11665-018-3782-z
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发表时间:
2018-12
影响因子:
2.3
通讯作者:
Qin G G
Qin G G
中科院分区:
材料科学4区
文献类型:
--
作者:
Hou Ruixiang;Li Lei;Fang Xin;Zhao Hui;Chen Yihang;Xie Ziang;Sun Guosheng;Zhang Xinhe;Zhao Yanfei;Huang Rong;Huang Zengli;He Youqin;Ma Nongnong;Zhang Jicai;Xu Wanjing;Yang Jinbo;Xiao Chijie;Qin G G

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最近,我们报道了一种名为无外加偏压等离子体掺杂(PDWOEB)的新型掺杂方法,该方法可在室温(RT)下将某些杂质引入硅(Si)和氮化镓(GaN)中。在这项研究中,实现了包括硼(B)、镁(Mg)、镍(Ni)等在内的一些杂质在室温下的掺杂。
Very recently, we reported a novel doping method called plasma doping without any external bias (PDWOEB) for the introduction of some impurities into Si and GaN at room temperature (RT). In this work, the RT doping of some impurities, including B, Mg, Ni, Cu, Mn, Cr and Fe, into SiC with ultra-shallow depths of tens of nanometer and very high surface concentrations, approaching or exceeding 1E20/cm3, by using PDWOEB is reported. It has been found for the first time that the doping depths and surface concentrations of these impurities doped into SiC by the PDWOEB increase drastically with increasing doping time and the ferromagnetism of SiC due to Ni doping is demonstrated. Moreover, the approximate diffusivities of B, Mg, Ni, Cu, Mn, Cr and Fe in SiC at RT under plasma stimulation are obtained. The physical mechanism of PDWOEB is further discussed, and some unclear viewpoints are clarified.
基于等离子体刺激室温扩散将 Si、Mg 和 Ca 掺杂到 GaN 中
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发表时间: 2017
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发表时间: 1997-07
期刊: Physica Status Solidi (a)
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