Stability and Microstructure Characterization of Barrierless Cu (Sn, C) Films
Stability and Microstructure Characterization of Barrierless Cu (Sn, C) Films
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无阻挡层 Cu (Sn, C) 薄膜的稳定性和微观结构表征
DOI：
10.4028/www.scientific.net/amr.1052.163
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发表时间：
2014-10
期刊：
影响因子：
--
通讯作者：
Dong C
中科院分区：
文献类型：
--
作者：
Li X N;Jin L J;Zhao L R;Dong C
研究了含扩散势垒元素（大原子Sn和小原子C）的Cu合金薄膜的热稳定性、粘附性和电阻率。三元Cu （0.6 at）。% Sn, 2 at。本文采用磁控共溅射法制备了% C)薄膜。薄膜的微观结构和电阻率分析表明，Cu (0.6 at。% Sn, 2 at。% C)薄膜与衬底的附着力较好，电阻率较低（600℃退火1 h，电阻率为2.8 μΩ·cm）。因此，碳原子的掺杂通过减少大原子的掺杂量对电阻率的影响较小，从而导致无障结构的整体电阻率降低。退火后，薄膜中的掺杂元素扩散到界面形成自钝化的非晶态层，进一步阻碍了Cu和Si之间的扩散。所以三元Cu （0.6 at）% Sn, 2 at。% C)膜具有较好的扩散阻隔作用。大原子和小原子在Cu薄膜中共掺杂是改善无势垒结构的一种很有前途的方法。
Thermal stability, adhesion and electronic resistivity of the Cu alloy films with diffusion barrier elements (large atom Sn and small atom C) have been studied. Ternary Cu (0.6 at.% Sn, 2 at.% C) films were prepared by magnetron co-sputtering in this work. The microstructure and resistivity analysis on the films showed that the Cu (0.6 at.% Sn, 2 at.% C) film had better adhesion with the substrate and lower resistivity (2.8 μΩ·cm, after annealing at 600 °C for 1 h). Therefore, the doping of carbon atoms makes less effect to the resistivity by decreasing the amount of the doped large atoms, which results in the decreasing of the whole resistivity of the barrierless structure. After annealing, the doped elements in the film diffused to the interface to form self-passivated amorphous layer, which could further hinder the diffusion between Cu and Si. So thus ternary Cu (0.6 at.% Sn, 2 at.% C) film had better diffusion barrier effect. Co-doping of large atoms and small atoms in the Cu film is a promising way to improve the barrierless structure.
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影响因子：
6.7
作者：
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通讯作者：
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影响因子：
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作者：
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DOI：
10.4028/www.scientific.net/msf.654-656.1744
发表时间：
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期刊：
Materials Science Forum
影响因子：
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作者：
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