Band-Tailored InAs/GaSb Superlattice in Infrared Application
Band-Tailored InAs/GaSb Superlattice in Infrared Application
复制标题
带状定制 InAs/GaSb 超晶格在红外应用中的应用
DOI:
10.4028/www.scientific.net/amr.750-752.936
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发表时间:
2013-08
期刊:
影响因子:
--
通讯作者:
郭杰
中科院分区:
文献类型:
--
作者:
郭杰
The energy band structure of InAs/GaSb superlattice can be tailored by changing the thickness of InAs or GaSb layer thickness. Different superlattice as InAs/GaSb (4ML/8ML, 8ML/8ML and 16ML/7ML) for cut-off wavelengths from short to long IR wavelength were designed and deposited on GaSb substrates by melocular beam epitaxy system. The lattice mismatch was below 1000ppm under the careful Ga1-xInx- type interface control. The responsitivity revealed the band structure in InAs/GaSb superlattice can be tailored and the cutoff wavelength was from 2.5μm to 11μm. The current-voltage relation and the differential resistance in infrared photodiode were also measured and studied.
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影响因子:
6
作者:
M. Walther;R. Rehm;J. Schmitz;J. Fleissner;F. Rutz;L. Kirste;R. Scheibner;J. Wendler;J. Ziegler
通讯作者:
M. Walther;R. Rehm;J. Schmitz;J. Fleissner;F. Rutz;L. Kirste;R. Scheibner;J. Wendler;J. Ziegler
影响因子:
4
作者:
B. Nguyen;D. Hoffman;E. Huang;S. Bogdanov;P. Delaunay;M. Razeghi;M. Tidrow
通讯作者:
B. Nguyen;D. Hoffman;E. Huang;S. Bogdanov;P. Delaunay;M. Razeghi;M. Tidrow
DOI:
10.1117/12.512556
发表时间:
2003-08
期刊:
--
影响因子:
--
作者:
M. Razeghi;Yajun Wei;J. Bae;A. Gin;A. Hood;Jutao Jiang;J. Nah
通讯作者:
M. Razeghi;Yajun Wei;J. Bae;A. Gin;A. Hood;Jutao Jiang;J. Nah
影响因子:
3.5
作者:
Guo Jie;Sun Wei-Guo;Niu Zhi-Chuan
通讯作者:
Niu Zhi-Chuan
DOI:
10.1002/pssc.200564174
发表时间:
2006-03
期刊:
Physica Status Solidi (c)
影响因子:
--
作者:
R. Rehm;J. Schmitz;J. Fleissner;M. Walther;J. Ziegler;W. Cabanski;R. Breiter
通讯作者:
R. Rehm;J. Schmitz;J. Fleissner;M. Walther;J. Ziegler;W. Cabanski;R. Breiter