Band-Tailored InAs/GaSb Superlattice in Infrared Application

Band-Tailored InAs/GaSb Superlattice in Infrared Application
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带状定制 InAs/GaSb 超晶格在红外应用中的应用

DOI:
10.4028/www.scientific.net/amr.750-752.936
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发表时间:
2013-08
期刊:
Advanced Materials Research
影响因子:
--
通讯作者:
郭杰
郭杰
中科院分区:
其他
文献类型:
--
作者:
郭杰

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InAs/GaSb超晶格的能带结构可以通过改变InAs层或GaSb层的厚度来调整。设计了不同的超晶格结构,如InAs/GaSb(4 ML/8 ML,8 ML/8 ML和16 ML/7 ML),并利用激光束外延系统在GaSb衬底上制备了不同截止波长的超晶格结构。在Ga_(1-x)In_x型界面控制下,晶格失配小于1000 ppm.响应率表明InAs/GaSb超晶格的能带结构可以定制,截止波长为2.5μm ~ 11μm。对红外光电二极管的电流-电压关系和微分电阻进行了测量和研究。
The energy band structure of InAs/GaSb superlattice can be tailored by changing the thickness of InAs or GaSb layer thickness. Different superlattice as InAs/GaSb (4ML/8ML, 8ML/8ML and 16ML/7ML) for cut-off wavelengths from short to long IR wavelength were designed and deposited on GaSb substrates by melocular beam epitaxy system. The lattice mismatch was below 1000ppm under the careful Ga1-xInx- type interface control. The responsitivity revealed the band structure in InAs/GaSb superlattice can be tailored and the cutoff wavelength was from 2.5μm to 11μm. The current-voltage relation and the differential resistance in infrared photodiode were also measured and studied.
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