Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography
Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography
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同步辐射X射线形貌观察6H-SiC单晶的底面弯曲
DOI：
10.1107/s002188980904196x
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发表时间：
2009-12
影响因子：
6.1
通讯作者：
Xiaobo Hu
中科院分区：
文献类型：
--
作者：
Lina Ning;Xiangang Xu;Yuqiang Gao;Xiaobo Hu
SiC单晶中的基面弯曲是一种主要由籽晶与保持器之间的热失配引起的结构缺陷，它严重影响了SiC单晶的质量，阻碍了SiC单晶的应用。本文采用高分辨X射线衍射仪（HRXRD）和透射同步辐射白光X射线形貌术（SWBXT）对基底面弯曲进行了检测。高分辨X射线衍射（HRXRD）表明（0001）Si面为凹球面，慢波衍射（SWBXT）表明劳厄斑的形状与同步辐射光束截面的形状不同。基于（0001）6 H-SiC单晶的球面曲率模型，模拟了劳厄斑的形状。计算结果与实验结果吻合较好。因此，SWBXT是检测基面弯曲的有效方法。
Basal plane bending is a structural defect in SiC single crystals caused mainly by the thermal mismatch between seed and holder, which deteriorates the quality of the wafers and blocks their applications. In this paper, basal plane bending was detected by high-resolution X-ray diffractometry (HRXRD) and transmission synchrotron white-beam X-ray topography (SWBXT). HRXRD reveals that the (0001) Si face is a concave sphere and SWBXT shows that the shapes of the Laue spots are different from that of the cross section of the synchrotron radiation beam. On the basis of a spherical curvature model for a (0001) 6H-SiC single crystal, the shapes of the Laue spots were simulated. The results are in good agreement with the experimental observations. Thus, SWBXT is an effective method for detecting basal plane bending.
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影响因子：
1.8
作者：
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通讯作者：
D. Nakamura;S. Yamaguchi;I. Gunjishima;Y. Hirose;T. Kimoto
影响因子：
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影响因子：
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影响因子：
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