Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regions
Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regions
复制标题
体掺杂对对称 DG MOSFET 阈值电压和沟道电位的影响（从累积到强反转区连续解）
DOI：
10.1088/0268-1242/24/8/085005
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发表时间：
2009-06
期刊：
影响因子：
--
通讯作者：
Lining Zhang
中科院分区：
文献类型：
--
作者：
Mansun Chan;Jin He;Jian Zhang;Feng Liu;Lining Zhang
本文采用解析方法分析了体掺杂对对称DG mosfet的阈值电压和通道电位的影响，并通过单片电位方程得到了一个适用于大范围掺杂浓度的全局连续通道电位解。进行了大量的数值模拟来验证所提出的结果。研究表明，掺杂晶体管中阈值电压的几何参数依赖关系与本征电压的几何参数依赖关系最终是不同的，通道中心电位的行为也在很大程度上依赖于体掺杂浓度。此外，所提出的通道电位解决方案不仅在整个工作范围内是准确和连续的，而且在不使用任何拟合参数的情况下，适用于各种掺杂浓度和几何尺寸的DG mosfet。
In this work, the effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs are evaluated by an analytical method, and a global continuous channel potential solution, valid for a wide range of doping concentrations, is obtained by a single-piece potential equation with a good initial guess from the analysis. Extensive numerical simulations are performed to verify the proposed results. The study shows that the geometric parameter dependences of the threshold voltage in the doped transistors are ultimately different from that in the intrinsic ones, and the behavior of the channel center potential is also largely dependent on the body doping concentration. Moreover, the proposed channel potential solution is demonstrated to be not only accurate and continuous in the whole operation regime, but also valid for various doping concentrations and geometrical sizes of DG MOSFETs, without employing any fitting parameter.
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DOI：
10.1109/vlsit.2003.1221122
发表时间：
2003-06
期刊：
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)
影响因子：
--
作者：
T. Park;S. Choi;D. Lee;Jae-yoon Yoo;B. Lee;Jungsu Kim;Choong-ho Lee;K. Chi;S. Hong;S. J. Hynn;Y. Shin;J. Han;I.S. Park;U. Chung;J. Moon;E. Yoon;Jang-Sik Lee
通讯作者：
T. Park;S. Choi;D. Lee;Jae-yoon Yoo;B. Lee;Jungsu Kim;Choong-ho Lee;K. Chi;S. Hong;S. J. Hynn;Y. Shin;J. Han;I.S. Park;U. Chung;J. Moon;E. Yoon;Jang-Sik Lee
影响因子：
3.1
作者：
B. Iñíguez;D. Jiménez;J. Roig;H. A. Hamid;L. Marsal;J. Pallarès
通讯作者：
B. Iñíguez;D. Jiménez;J. Roig;H. A. Hamid;L. Marsal;J. Pallarès
影响因子：
1.7
作者：
R. V. Langevelde;F. Klaassen
通讯作者：
R. V. Langevelde;F. Klaassen
影响因子：
3.1
作者：
K. Shen;F. Hui;W. Wong;Zhiheng Chen;J. Lau;P. Chan;P. Ko
通讯作者：
K. Shen;F. Hui;W. Wong;Zhiheng Chen;J. Lau;P. Chan;P. Ko
DOI：
--
发表时间：
2003
期刊：
IEEE Circuits & Devices
影响因子：
--
作者：
Qiang Chen;K. Bowman;E. Harrell;J. Meindl
通讯作者：
Qiang Chen;K. Bowman;E. Harrell;J. Meindl