Catastrophic Degradation of InGaN/GaN Blue Laser Diodes
Catastrophic Degradation of InGaN/GaN Blue Laser Diodes
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InGaN/GaN 蓝色激光二极管的灾难性退化
DOI：
10.1109/tdmr.2016.2617885
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发表时间：
2016-10
影响因子：
2
通讯作者：
Yang Hui
中科院分区：
文献类型：
--
作者：
Wen Pengyan;Zhang Shuming;Liu Jianping;Li Deyao;Zhang Liqun;Zhou Kun;Su Xujun;Tian Aiqin;Zhang Feng;Yang Hui
A study of catastrophic degradation of InGaN/GaN laser diodes (LDs) is presented. Local damage on the aged LD is identified with the reduction of the electron beam induced current intensity. A pipe-shaped defect is observed in the particular damaged region by using the transmission electron microscopy (TEM) and scanning TEM technique. Diffusion of the contact metal along the defect is enhanced by the local electric field and high temperature. Catastrophic degradation of the LD occurs due to burning of the local region.
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基于发光特性的 InGaN/GaN 激光衰减研究
影响因子：
3.2
作者：
Wen Pengyan;Zhang Shuming;Liu Jianping;Li Deyao;Zhang Liqun;Sun Qian;Tian Aiqin;Zhou Kun;Zhou Taofei;Yang Hui
通讯作者：
Yang Hui
影响因子：
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通讯作者：
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影响因子：
3.2
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通讯作者：
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影响因子：
4
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通讯作者：
M. Meneghini;S. Carraro;G. Meneghesso;N. Trivellin;G. Mura;F. Rossi;G. Salviati;K. Holc;T. Weig
影响因子：
4
作者：
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通讯作者：
M. Meneghini;N. Trivellin;K. Orita;S. Takigawa;Tsuyoshi Tanaka;D. Ueda;G. Meneghesso;E. Zanoni