A novel wavelength-adjusting method in InGaN-based light-emitting diodes.
A novel wavelength-adjusting method in InGaN-based light-emitting diodes.
复制标题
一种新型 InGaN 基发光二极管波长调节方法
DOI：
10.1038/srep03389
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发表时间：
2013-12-17
影响因子：
4.6
通讯作者：
Chen, Hong
中科院分区：
文献类型：
--
作者：
Deng, Zhen;Jiang, Yang;Ma, Ziguang;Wang, Wenxin;Jia, Haiqiang;Zhou, Junming;Chen, Hong
追求绿色发射光谱的高内量子效率（IQE）被称为“绿色间隙”挑战。现在，研究人员将希望寄托在基于ingan的材料上，以开发出高亮度的绿色发光二极管。然而，当InGaN LED的发射波长通过改变生长温度或井厚而增加时，IQE迅速下降。本文提出了一种新的波长调节方法，并对LED的光学特性进行了研究。通过在InGaN井层生长前附加铟预沉积工艺，使得铟沿生长方向的分布更加均匀，导致InGaN井层中铟的平均含量增加，导致峰值波长红移。我们还发现铟预沉积LED的IQE随波长红移而增加。这种依赖性与传统InGaN led的iiq波长行为相反。讨论了IQE、波长与铟预沉积工艺之间的关系。
The pursuit of high internal quantum efficiency (IQE) for green emission spectral regime is referred as “green gap” challenge. Now researchers place their hope on the InGaN-based materials to develop high-brightness green light-emitting diodes. However, IQE drops fast when emission wavelength of InGaN LED increases by changing growth temperature or well thickness. In this paper, a new wavelength-adjusting method is proposed and the optical properties of LED are investigated. By additional process of indium pre-deposition before InGaN well layer growth, the indium distribution along growth direction becomes more uniform, which leads to the increase of average indium content in InGaN well layer and results in a redshift of peak-wavelength. We also find that the IQE of LED with indium pre-deposition increases with the wavelength redshift. Such dependence is opposite to the IQE-wavelength behavior in conventional InGaN LEDs. The relations among the IQE, wavelength and the indium pre-deposition process are discussed.
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DOI：
10.1103/physrevb.4.3451
发表时间：
1971-01-01
期刊：
PHYSICAL REVIEW B-SOLID STATE
影响因子：
--
作者：
BIMBERG, D;SONDERGELD, M;GROBE, E
通讯作者：
GROBE, E
影响因子：
3.2
作者：
Park, SH;Chuang, SL
通讯作者：
Chuang, SL
影响因子：
3.2
作者：
Shapiro, NA;Feick, H;Weber, ER
通讯作者：
Weber, ER
影响因子：
4
作者：
Li, Y.-L.;Huang, R.;Lai, Y.-H.
通讯作者：
Lai, Y.-H.
影响因子：
4
作者：
Narukawa, Y;Kawakami, Y;Nakamura, S
通讯作者：
Nakamura, S