Fabrication and modeling of recessed traces for silicon-based neural microelectrodes.
Fabrication and modeling of recessed traces for silicon-based neural microelectrodes.
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DOI:
10.1088/1741-2552/abb9bd
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发表时间:
2020-10-08
影响因子:
4
通讯作者:
Han M
中科院分区:
文献类型:
--
作者:
Nolta NF;Ghelich P;Ersöz A;Han M
Chronically-implanted neural microelectrodes are powerful tools for neuroscience research and emerging clinical applications, but their usefulness is limited by their tendency to fail after months in vivo. One failure mode is the degradation of insulation materials that protect the conductive traces from the saline environment. Studies have shown that material degradation is accelerated by mechanical stresses, which tend to concentrate on raised topographies such as conducting traces. Therefore, to avoid raised topographies, we developed a fabrication technique that recesses (buries) the traces in dry-etched, self-aligned trenches. The fabrication technique produced flatness within approximately 15 nm. Finite element modeling showed that the recessed geometry would be expected to reduce intrinsic stress concentrations in the insulation layers. Finally, in vitro electrochemical tests confirmed that recessed traces had robust recording and stimulation capabilities that were comparable to an established non-recessed device design. Our recessed trace fabrication technique requires no extra masks, is easy to integrate with existing processes, and is likely to improve the long-term performance of implantable neural devices.
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影响因子:
14
作者:
Kozai, Takashi D. Y.;Catt, Kasey;Li, Xia;Gugel, Zhannetta V.;Olafsson, Valur T.;Vazquez, Alberto L.;Cui, X. Tracy
通讯作者:
Cui, X. Tracy
DOI:
10.1109/tnsre.2006.870495
发表时间:
2006-03-01
影响因子:
4.9
作者:
Liu, XD;McCreery, DB;Agnew, WF
通讯作者:
Agnew, WF
DOI:
10.1002/ar.22580
发表时间:
2012-11
期刊:
Anatomical record (Hoboken, N.J. : 2007)
影响因子:
--
作者:
Eshraghi AA;Nazarian R;Telischi FF;Rajguru SM;Truy E;Gupta C
通讯作者:
Gupta C
DOI:
10.1016/j.ijporl.2008.03.005
发表时间:
2008-07-01
影响因子:
1.5
作者:
Bradham, Tamala;Jones, Julibeth
通讯作者:
Jones, Julibeth
影响因子:
4
作者:
Davis, T. S.;Wark, H. A. C.;Greger, B.
通讯作者:
Greger, B.