Loss analysis in nitride deep ultraviolet planar cavity
Loss analysis in nitride deep ultraviolet planar cavity
复制标题
氮化物深紫外平面腔损耗分析
DOI：
10.1117/1.jnp.12.043504
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发表时间：
2018-10
影响因子：
1.5
通讯作者：
Baoping Zhang
中科院分区：
文献类型：
--
作者：
Zhongming Zheng;Yingqian Li;Onkundi Paul;Hao Long;Samuel Matta;Mathieu Leroux;Julien Brault;Leiying Ying;Zhiwei Zheng;Baoping Zhang
摘要。近几十年来，关于可见垂直腔面发射激光器（VCSELs）的文献报道较多。然而，由于腔内光损耗大，深紫外（DUV） VCSEL激光仍然很少实现。详细分析了氮化DUV微腔中的光损耗。制备了具有氮化镓基量子点活性层和双面HfO2 / SiO2分布布喇格反射器的DUV氮化垂直fabry - p<s:1>微腔。由腔模的Q值推断出103cm−1数量级的光损耗。计算了DUV腔内光损耗的主要来源，并将其归结为界面散射。激光升空后出现的界面粗糙度以及粗糙界面与驻波之间的重叠是影响界面散射损失的两个关键参数。我们相信我们的结果将为改进DUV VCSEL装置提供有用的信息。
Abstract. In recent decades, literatures about visible vertical cavity surface emitting lasers (VCSELs) have been reported. However, due to high optical loss in the cavity, lasing from deep ultraviolet (DUV) VCSEL was still rarely achieved. The optical loss in nitride DUV microcavity was analyzed in detail. DUV nitride vertical Fabry–Pérot microcavity with active layer of AlGaN-based quantum dots and double-side HfO2 / SiO2 distributed bragger reflectors was fabricated. Optical losses with of the order of 103 cm − 1 were deduced from the Q value of the cavity modes. The main origination of optical loss in DUV cavity was calculated and ascribed to the interface scattering. The interface roughness appearing after laser lift-off process and overlap between rough interface and standing optical wave were two key parameters that contributed to interface scattering loss. We believe that our results will provide useful information for improving DUV VCSEL devices.
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DOI：
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发表时间：
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期刊：
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