Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication.
Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication.
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反应离子刻蚀的最新进展及高深径比微纳加工技术的应用
DOI：
10.3390/mi12080991
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发表时间：
2021-08-20
期刊：
影响因子：
3.4
通讯作者：
Huff M
中科院分区：
文献类型：
--
作者：
Huff M
本文综述了反应离子刻蚀（RIE）在高深径比微纳加工应用方面的最新进展。对于微纳加工中使用的材料进行高深径比刻蚀，已成为一项极为重要的使能技术，尤其在体微加工应用中，而且在诸如三维多功能系统集成等主流集成电路技术领域的重要性也日益凸显。与其他竞争技术相比，传统反应离子刻蚀的特性使其能够实现高度各向异性。这在微系统器件制造中至关重要，原因有很多，主要是因为它能更精确地控制最终器件的尺寸。这直接降低了开发成本，同时提高了生产良率。然而，传统反应离子刻蚀仅限于中等刻蚀深度（例如，几微米）。与传统反应离子刻蚀方法相比，新型反应离子刻蚀方法和设备的最新发展实现了更深的刻蚀深度和更高的深径比，彻底改变了体微加工技术。其中最广为人知的技术是电感耦合等离子体（ICP）深反应离子刻蚀（DRIE），它已成为硅基微纳加工器件开发和生产的支柱技术。本文将综述针对硅、熔融石英（石英玻璃）、玻璃、碳化硅、化合物半导体和压电材料的高深径比反应离子刻蚀技术。
This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a number of reasons, primarily because it allows the resultant device dimensions to be more accurately and precisely controlled. This directly leads to a reduction in development costs as well as improved production yields. Nevertheless, traditional RIE was limited to moderate etch depths (e.g., a few microns). More recent developments in newer RIE methods and equipment have enabled considerably deeper etches and higher aspect ratios compared to traditional RIE methods and have revolutionized bulk micromachining technologies. The most widely known of these technologies is called the inductively-coupled plasma (ICP) deep reactive ion etching (DRIE) and this has become a mainstay for development and production of silicon-based micro- and nano-machined devices. This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials.
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影响因子：
3.4
作者：
Gerlt MS;Läubli NF;Manser M;Nelson BJ;Dual J
通讯作者：
Dual J
DOI：
10.1007/s00542-006-0211-2
发表时间：
2007-03-01
影响因子：
2.1
作者：
Chen, S. C.;Lin, Y. C.;Cheng, C. H.
通讯作者：
Cheng, C. H.
影响因子：
1.4
作者：
Bale, M;Palmer, RE
通讯作者：
Palmer, RE
影响因子：
1.4
作者：
Chabert, P
通讯作者：
Chabert, P
影响因子：
2.3
作者：
BARTHA, JW;GRESCHNER, J;MAQUIN, P
通讯作者：
MAQUIN, P