The underlying micro-mechanism of performance enhancement of non-polar n-ZnO/p-AlGaN ultraviolet light emitting diode with i-ZnO inserted layer
The underlying micro-mechanism of performance enhancement of non-polar n-ZnO/p-AlGaN ultraviolet light emitting diode with i-ZnO inserted layer
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i-ZnO插入层非极性n-ZnO/p-AlGaN紫外发光二极管性能增强的底层微观机制
DOI：
10.1063/1.5010594
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发表时间：
2018-01
影响因子：
4
通讯作者：
Y.H. Gao
中科院分区：
文献类型：
--
作者：
F. Jiang;J.W. Chen;H. Bi;L.Y. Li;W.K. Jing;J. Zhang;J.N. Dai;R.C. Che;C.Q. Chen;Y.H. Gao
非极性a面n-ZnO/p-AlGaN和n-ZnO/i-ZnO/p-AlGaN异质结薄膜发光二极管（LED）具有良好的晶体质量。光学测量显示 i-ZnO 层插入后性能明显增强。离轴电子全息术显示，具有典型 p-n 结特性的异质结上的电位降为 ∼1.5 V。研究发现，n-ZnO和p-AlGaN区域的静电势是倾斜的，相应的静电场彼此相反。静电场主要归因于应变引起的压电极化。在p-n异质结中插入i-ZnO层后，在本征ZnO区域中产生相对平坦的静电势，有助于注入的电子和空穴更快的运动，使i-ZnO层更利于辐射复合，增强激子复合的可能性，最终提高LED性能。
Non-polar a-plane n-ZnO/p-AlGaN and n-ZnO/i-ZnO/p-AlGaN heterojunction film light-emitting diodes (LEDs) are fabricated with good crystalline quality. The optical measurements show obvious performance enhancement with i-ZnO layer insertion. Off-axis electron holography reveals a potential drop of ∼1.5 V across the heterojunctions with typical p-n junction characteristics. It is found that the electrostatic potentials are inclined and the corresponding electrostatic fields are opposite to each other in n-ZnO and p-AlGaN regions. The electrostatic fields are mainly attributed to strain induced piezoelectric polarizations. After an insertion of an i-ZnO layer into the p-n heterojunction, comparatively flat electrostatic potential generates in the intrinsic ZnO region and contributes to faster movements of the injected electrons and holes, making the i-ZnO layer more conductive to the radiative recombination with enhanced exciton recombination possibilities and at last the LED performance enhancement.
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影响因子：
3.5
作者：
A. Yankovich;Chenyu Zhang;Albert K. Oh;T. Slater;F. Azough;R. Freer;S. Haigh;Rebecca M Willett
通讯作者：
A. Yankovich;Chenyu Zhang;Albert K. Oh;T. Slater;F. Azough;R. Freer;S. Haigh;Rebecca M Willett
n-ZnO/In0.17Al0.83N/p-GaN异质结中In0.17Al0.83N中间层的功能
影响因子：
6.7
作者：
Xiao Wang;Xuewei Gan;Guozhen Zhang;Xi Su;Meijuan Zheng;Zhiwei Ai;Hao Wu;Chang Liu
通讯作者：
Chang Liu
影响因子：
2.3
作者：
Z. Gan;Seung-Hyuck Ahn;Hongbin Yu;David J. Smith;M. McCartney
通讯作者：
Z. Gan;Seung-Hyuck Ahn;Hongbin Yu;David J. Smith;M. McCartney
DOI：
10.1007/s00339-014-8804-6
发表时间：
2015-03
期刊：
Applied Physics A
影响因子：
--
作者：
M. Morshed;Z. Zuo;Jian Huang;Jianlin Liu
通讯作者：
M. Morshed;Z. Zuo;Jian Huang;Jianlin Liu
DOI：
10.1016/j.physe.2008.10.017
发表时间：
2009-02
影响因子：
3.3
作者：
B. Ling;X. W. Sun;J. Zhao;Swee Tiam Tan;Z. Dong;Yi Yang;H. Y. Yu;K. Qi
通讯作者：
B. Ling;X. W. Sun;J. Zhao;Swee Tiam Tan;Z. Dong;Yi Yang;H. Y. Yu;K. Qi