Annealing effect on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN MIS device
Annealing effect on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN MIS device
复制标题
退火对 Ti/Si3N4/n-GaN MIS 器件双极阻变特性的影响
DOI：
10.1016/j.jallcom.2018.01.072
复制
发表时间：
2018-04
影响因子：
6.2
通讯作者：
Song Hang
中科院分区：
文献类型：
--
作者：
Chen Yiren;Li Zhiming;Zhang Zhiwei;Hu Liqin;Jiang Hong;Miao Guoqing;Song Hang
本文研究了退火对Ti/Si 3 N4/n-GaN金属-绝缘体-半导体（MIS）结构忆阻器双极阻变特性的影响。结果表明，退火后的Ti/Si_3N_4/n-GaN MIS器件的双极阻变特性的稳定性和重复性得到了很大的提高。导电力显微镜（CFM）和X射线光电子能谱（XPS）揭示了所涉及的机制。热退火证实了Si_3 N_4中的Ti是原位掺杂的，这是由于Si_3 N_4中的Ti在正偏压下通过电还原过程与N原子结合，有利于形成稳定的纳米Si丝。相反，在负偏压下，Si细丝通过与n-GaN侧附近的N原子复合而断裂。该器件易于与GaN基高电子迁移率晶体管（HEMT）集成，构成一管一阻（1 T1 R）的非易失性存储单元，有望拓展氮化物半导体在发光二极管、激光二极管、功率器件、光电探测器等领域的应用，并在数据存储领域发挥重要作用。
In this paper, the effect of annealing on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN metal-insulator-semiconductor (MIS) structure memristor is demonstrated. The results show that the stability and repeatability of the bipolar resistive switching are greatly improved in annealed Ti/Si3N4/n-GaN MIS devices. The mechanism involved is revealed by both conductive force microscopy (CFM) and x-ray photoelectron spectroscopy (XPS). It is confirmed toin-situlocal Ti doping in Si3N4by thermal annealing and can be ascribed to the local Ti dopants in the Si3N4bonding the N atoms at positive bias by electro-reductive process that benefits to form stable nanoscale Si filaments. On the contrary, the Si filaments rupture by recombining with N atoms near the n-GaN side at negative bias. The proposed device is apt to integrate with a GaN-based high electron mobility transistor (HEMT) to structure a one-transistor-one-resistor (1T1R) nonvolatile memory cell, which is expected to develop the application of the nitride semiconductors in data storage in addition to the applications in light-emitting diodes, laser diodes, power devices, and photodetectors.
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DOI：
10.1103/physrevb.43.4507
发表时间：
1991-02
期刊：
Physical review. B, Condensed matter
影响因子：
--
作者：
Yin;Smith
通讯作者：
Yin;Smith
影响因子：
4
作者：
Cicek, E.;McClintock, R.;Razeghi, M.
通讯作者：
Razeghi, M.
影响因子：
64.8
作者：
Borghetti, Julien;Snider, Gregory S.;Williams, R. Stanley
通讯作者：
Williams, R. Stanley
影响因子：
4
作者：
M. Vagadia;A. Ravalia;P. Solanki;R. Choudhary;D. Phase;D. G. Kuberkar
通讯作者：
M. Vagadia;A. Ravalia;P. Solanki;R. Choudhary;D. Phase;D. G. Kuberkar
影响因子：
3.5
作者：
Kim, Sungjun;Jung, Sunghun;Park, Byung-Gook
通讯作者：
Park, Byung-Gook