Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode
Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode
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盖革模式下晶圆键合Ge/Si单光子雪崩光电二极管的界面态计算
DOI：
10.1109/ted.2017.2696579
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发表时间：
2017-05
影响因子：
3.1
通讯作者：
Chen Songyan
中科院分区：
文献类型：
--
作者：
Ke Shaoying;Lin Shaoming;Mao Danfeng;Ji Xiaoli;Huang Wei;Xu Jianfang;Li Cheng;Chen Songyan
基于晶圆键合方法的异质半导体器件因其高质量的晶圆键合有源层而受到越来越多的关注。在本文中，我们首先基于泊松统计理论研究了晶圆键合的锗/硅单光子雪崩光电二极管（SPAD）的单光子特性（包括单光子探测效率（SPDE）、暗计数率（DCR）和后脉冲概率（AP））对锗/硅（亲水反应）以及硅 - 硅（疏水反应或表面活化方法）晶圆键合界面处界面态的依赖性。研究发现，界面态密度和界面态的能级位置显著影响线性模式电场分布（雪崩概率）、3 - dB带宽（暗载流子）、增益（量子效率）和有效渡越时间（俘获载流子），进而影响DCR和SPDE。此外，还阐明了AP对雪崩电荷和界面复合率的依赖性。期望本文能为高性能SPAD的制造提供指导。
More and more attention has been paid to the heterogeneous semiconductor device based on the wafer-bonding method due to its high-quality wafer-bonded active layer. In this paper, we first theoretically study the dependence of the single-photon properties, including the single-photon detection efficiency (SPDE), dark count rate (DCR), and afterpulsing probability (AP), of the wafer-bonded Ge/Si single-photon avalanche photodiode (SPAD) on the interface state at the Ge/Si (hydrophilic reaction) and Si-Si (hydrophobic reaction or surface-activated method) wafer-bonded interface based on the Poisson statistics. It is found that the interface state density and the energy level position of the interface state significantly affect the linear-mode electric field distribution (avalanche probability), 3-dB bandwidth (dark carriers), gain (quantum efficiency), and effective transit time (trapped carriers), which in turn affect the DCR and the SPDE. Furthermore, the dependence of the AP on the avalanche charge and the interface recombination rate is clarified as well. It is expected that this paper may give guidance for the fabrication of high-performance SPAD.
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