Surface roughness, mechanical properties and bonding structure of silicon carbon nitride films grown by dual ion beam sputtering
Surface roughness, mechanical properties and bonding structure of silicon carbon nitride films grown by dual ion beam sputtering
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双离子束溅射氮化碳硅薄膜的表面粗糙度、力学性能及键合结构
DOI：
10.1016/j.jallcom.2009.11.063
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发表时间：
2010-03
影响因子：
6.2
通讯作者：
吴雪梅
中科院分区：
文献类型：
--
作者：
周飞;王晓雷;岳宾;诸葛兰剑;吴雪梅
采用双离子束溅射（DIBS）技术，在100℃的混合Ar/ n2气氛中沉积了氮化硅碳膜（SiCN）。采用非接触式表面轮廓仪和纳米压头测量了SiCN薄膜的表面粗糙度和力学性能。利用傅里叶变换红外光谱（FTIR）、拉曼光谱（Raman spectroscopy）和x射线光电子能谱（XPS）分析了SiCN薄膜的成键结构。系统地讨论了辅助离子束能量和浓度对SiCN薄膜表面粗糙度、力学性能和键合结构的影响。结果表明：在辅助离子束能量的作用下，SiCN薄膜表面粗糙度和硬度的变化范围分别为7 ~ 27nm和23 ~ 29gpa；随着氮离子束浓度的增加，膜表面粗糙度先减小到最小值后增大，硬度先增大到峰值后减小。当辅助离子束能量和浓度分别为300eV和0.5时，SiCN膜的表面粗糙度最低为11nm，硬度最高为29GPa，其原子比C:Si:N:O约为1:42:0.18:0.32。SiCN膜的成键结构主要由Si - c、Si - n、C-N、CN和CC键组成，对应于以Si（C4）、Si（N4）和Si（C4−nNn）为单位的混合sp2/sp3杂化键网络。薄膜的力学性能与SiCN薄膜中Si-C、Si-N、CN和C-N键的比例有关。
Silicon carbon nitride (SiCN) films were deposited by dual ion beam sputtering (DIBS) of SiC target in mixed Ar/N2atmosphere at 100°C. The surface roughness and the mechanical properties of the SiCN films were measured by using non-contact surface profilometer and nano-indenter. The bonding structure for the SiCN films was analyzed using Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS), respectively. The influences of assisting ion beam energy and concentration on surface roughness, mechanical properties and bonding structure of the SiCN films were discussed systematically. The results showed that the variations of surface roughness and hardness for the SiCN films with the assisting ion beam energy were in the range of 7–27nm and 23–29GPa, respectively. With an increase in the nitrogen ion beam concentration, the film surface roughness first decreased to a minimum value, and then increased, while the hardness first increased to a peak value, and then decreased. When the assisting ion beam energy and concentration were 300eV and 0.5, the SiCN film possessed the low surface roughness of 11nm and the highest hardness of 29GPa, its atoms ratio, C:Si:N:O was about 1:0.42:0.18:0.32. The bonding structure of the SiCN films mainly consisted of Si–C, Si–N, C–N, CN and CC bonds and corresponded to a network of the mixed sp2/sp3hybridized bonds with the units of Si(C4), Si(N4) and Si(C4−nNn). The film mechanical properties were correlated to the proportion of Si–C, Si–N, CN and C–N bonds in the SiCN films.
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影响因子：
1.7
作者：
Li‐Chyong Chen;C. Wu;J. Wu;Kuei-Hsien Chen
通讯作者：
Li‐Chyong Chen;C. Wu;J. Wu;Kuei-Hsien Chen
影响因子：
6.7
作者：
Z. Alizadeh;K. Sundaram;S. Seal
通讯作者：
Z. Alizadeh;K. Sundaram;S. Seal
影响因子：
6.2
作者：
Bhattacharyya, A. S.;Mishra, S. K.;Das, G. C.
通讯作者：
Das, G. C.
影响因子：
6.2
作者：
Chen, Zhiyong;Lin, Hongfeng;Xie, Erqing
通讯作者：
Xie, Erqing
影响因子：
4.1
作者：
J. Vlček;M. Kormunda;J. Cizek;Z. Soukup;V. Peřina;J. Zemek
通讯作者：
J. Vlček;M. Kormunda;J. Cizek;Z. Soukup;V. Peřina;J. Zemek