Design and Simulation of Improved SOI SiGe Hetero-Junction Bipolar Transistor Architecture with Strain Engineering
Design and Simulation of Improved SOI SiGe Hetero-Junction Bipolar Transistor Architecture with Strain Engineering
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采用应变工程的改进型 SOI SiGe 异质结双极晶体管架构的设计与仿真
DOI：
10.4236/jamp.2020.82017
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发表时间：
2020-01
期刊：
影响因子：
--
通讯作者：
Chunyu Zhou
中科院分区：
文献类型：
--
作者：
Naidan Miao;Peipei Liu;Jianhao Wen;Jinxi Wei;Baichuan Zhang;Shiqi Wang;Ruwen Zeng;Guanyu Wang;Chunyu Zhou
为了改善SiGe异质结双极晶体管（HBT）的电学和频率特性，设计了一种新型SOI SiGe异质结双极晶体管结构。与传统的SOI SiGe HBT相比，该结构具有更小的发射极和集电极窗口宽度。在Si_（0.85）Ge_（0.15）诱导的附加单轴应力作用下，集电区、基区和发射区均发生应变，有利于提高SiGe HBT的性能。利用SILVACO公司的TCAD软件进行了数值模拟，结果表明，最大电流增益βmax和厄利电压VA分别在1062 V和186 V时达到，β ×VA为1.975 × 105 V，当基区Ge成分呈梯形分布时，峰值截止频率fT为419 GHz。与传统SOI SiGe HBT相比，SOI SiGe HBT的截止频率fT提高了52.9%.
In order to improve the electrical and frequency characteristics of SiGe heterojunction bipolar transistors (HBTs), a novel structure of SOI SiGe heterojunction bipolar transistor is designed in this work. Compared with traditional SOI SiGe HBT, the proposed device structure has smaller window widths of emitter and collector areas. Under the act of additional uniaxial stress induced by Si0.85Ge0.15, all the collector region, base region and emitter region are strained, which is beneficial to improve the performance of SiGe HBTs. Employing the SILVACOⓇ TCAD tools, the numerical simulation results show that the maximum current gain βmax, the Earley voltage VA are achieved for 1062 and 186 V, respectively, the product of β and VA, i.e., β ×VA, is 1.975 × 105 V and, the peak cutoff frequency fT is 419 GHz when the Ge component in the base has configured to be a trapezoidal distribution. The proposed SOI SiGe HBT architecture has a 52.9% improvement in cutoff frequency fT compared to the conventional SOI SiGe HBTs.
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DOI：
10.1109/iedm.2016.7838335
发表时间：
2016-12
期刊：
2016 IEEE International Electron Devices Meeting (IEDM)
影响因子：
--
作者：
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DOI：
10.1109/bctm.2013.6798181
发表时间：
2013-09
期刊：
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
影响因子：
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影响因子：
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DOI：
10.1109/icct.2015.7399858
发表时间：
2015-10
期刊：
2015 IEEE 16th International Conference on Communication Technology (ICCT)
影响因子：
--
作者：
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影响因子：
20.6
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