Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels
Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels
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用于具有二维 MoSe2 通道的非易失性存储器应用的铁电 FET
DOI：
10.1088/2053-1583/aa5c17
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发表时间：
2017-02
期刊：
影响因子：
5.5
通讯作者：
Zheng Li
中科院分区：
文献类型：
--
作者：
Xudong Wang;Chunsen Liu;Yan Chen;Guangjian Wu;Xiao Yan;Hai Huang;Peng Wang;Bobo Tian;Zhenchen Hong;Yutao Wang;Shuo Sun;Hong Shen;Tie Lin;Weida Hu;Minghua Tang;Peng Zhou;Jianlu Wang;Jinglan Sun;Xiangjian Meng;Junhao Chu;Zheng Li
石墨烯和其他二维材料在纳米电子学中的潜在应用受到了相当大的关注。在这里，我们报告的顶栅非易失性存储器场效应晶体管（FET）与不同层的MoSe 2纳米片通道门控铁电薄膜。FET的常规栅极电介质被提供铁电极化电场的铁电薄膜代替，因此被定义为Fe-FET，其中聚（偏二氟乙烯-三氟乙烯）（P（VDF-TrFE））被用作栅极电介质。在具有不同厚度的MoSe 2沟道的器件中，具有单层MoSe 2的器件表现出较大的电子输运滞后，具有超过105的写入/擦除比，并且显示出优异的保持和耐久性能。利用能带理论定性地分析了器件良好性能的可能机制。此外，一个全面的研究比较不同厚度的MoSe 2通道的记忆性能。发现增加MoSe 2层的数量会导致存储器窗口减小。然而，5 nm的MoSe 2厚度产生大于103的写入/擦除比。结果表明，基于Fe-FET结构，二维半导体和有机铁电栅介质的组合在非易失性铁电存储器中具有良好的应用前景。
Graphene and other two-dimensional materials have received considerable attention regarding their potential applications in nano-electronics. Here, we report top-gate nonvolatile memory field-effect transistors (FETs) with different layers of MoSe2 nanosheets channel gated by ferroelectric film. The conventional gate dielectric of FETs was replaced by a ferroelectric thin film that provides a ferroelectric polarization electric field, and therefore defined as an Fe-FET where the poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) was used as the gate dielectric. Among the devices with MoSe2 channels of different thicknesses, the device with a single layer of MoSe2 exhibited a large hysteresis of electronic transport with an over 105 write/erase ratio, and displayed excellent retention and endurance performance. The possible mechanism of the device’s good properties was qualitatively analyzed using band theory. Additionally, a comprehensive study comparing the memory properties of MoSe2 channels of different thicknesses is presented. Increasing the numbers of MoSe2 layers was found to cause a reduced memory window. However, MoSe2 thickness of 5 nm yielded a write/erase ratio of more than 103. The results indicate that, based on a Fe-FET structure, the combination of two-dimensional semiconductors and organic ferroelectric gate dielectrics shows good promise for future applications in nonvolatile ferroelectric memory.
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