Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions
Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions
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开发一种技术,用于表征 SRAM 相关条件下偏置温度不稳定性引起的器件间变化
DOI:
10.1109/ted.2014.2335053
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发表时间:
2014
影响因子:
3.1
通讯作者:
Duan M
中科院分区:
文献类型:
--
作者:
Duan M
SRAM is vulnerable to device-to-device variation (DDV), since it uses minimum-sized devices and requires device matching. In addition to the as-fabricated DDV at time-zero, aging induces a time-dependent DDV (TDDV). Bias temperature instability (BTI) is a dominant aging process. A number of techniques have been developed to characterize the BTI, including the conventional pulse--, random telegraph noises, time-dependent defect spectroscopy, and TDDV accounting for the within-device fluctuation. These techniques, however, cannot be directly applied to SRAM, because their test conditions do not comply with typical SRAM operation. The central objective of this paper is to develop a technique suitable for characterizing both the negative BTI (NBTI) and positive BTI (PBTI) in SRAM. The key issues addressed include the SRAM relevant sensing Vg, measurement delay, capturing the upper envelope of degradation, sampling rate, and measurement time window. The differences between NBTI and PBTI are highlighted. The impact of NBTI and PBTI on the cell-level performance is assessed by simulation, based on experimental results obtained from individual devices. The simulation results show that, for a given static noise margin, test conditions have a significant effect on the minimum operation bias.
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影响因子:
2
作者:
Stewart E. Rauch
通讯作者:
Stewart E. Rauch
影响因子:
4.9
作者:
J. Zhang;M. Chang;G. Groeseneken
通讯作者:
G. Groeseneken
影响因子:
4.9
作者:
W.D. Zhang;J.F. Zhang;C.Z. Zhao;M.H. Chang;G. Groeseneken;R. Degraeve
通讯作者:
R. Degraeve
影响因子:
5.4
作者:
LAKSHMIKUMAR, KR;HADAWAY, RA;COPELAND, MA
通讯作者:
COPELAND, MA
影响因子:
3.1
作者:
Z. Ji;J. Zhang;M. Chang;B. Kaczer;G. Groeseneken
通讯作者:
G. Groeseneken