Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions

Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions
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开发一种技术,用于表征 SRAM 相关条件下偏置温度不稳定性引起的器件间变化

DOI:
10.1109/ted.2014.2335053
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发表时间:
2014
影响因子:
3.1
通讯作者:
Duan M
Duan M
中科院分区:
工程技术2区
文献类型:
--
作者:
Duan M

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SRAM 很容易受到设备间差异 (DDV) 的影响,因为它使用最小尺寸的设备并且需要设备匹配。除了零时间时制造的 DDV 之外,老化还会引发时间相关的 DDV (TDDV)。偏置温度不稳定性(BTI)是主要的老化过程。已经开发出多种技术来表征 BTI,包括传统脉冲、随机电报噪声、时间相关缺陷光谱以及考虑设备内波动的 TDDV。然而,这些技术不能直接应用于 SRAM,因为它们的测试条件不符合典型的 SRAM 操作。本文的中心目标是开发一种适用于表征 SRAM 中的负 BTI (NBTI) 和正 BTI (PBTI) 的技术。解决的关键问题包括与 SRAM 相关的感测 Vg、测量延迟、捕获退化上限、采样率和测量时间窗口。 NBTI 和 PBTI 之间的差异被突出显示。基于从各个设备获得的实验结果,通过模拟评估 NBTI 和 PBTI 对电池级性能的影响。仿真结果表明,对于给定的静态噪声容限,测试条件对最小工作偏差有显着影响。
SRAM is vulnerable to device-to-device variation (DDV), since it uses minimum-sized devices and requires device matching. In addition to the as-fabricated DDV at time-zero, aging induces a time-dependent DDV (TDDV). Bias temperature instability (BTI) is a dominant aging process. A number of techniques have been developed to characterize the BTI, including the conventional pulse--, random telegraph noises, time-dependent defect spectroscopy, and TDDV accounting for the within-device fluctuation. These techniques, however, cannot be directly applied to SRAM, because their test conditions do not comply with typical SRAM operation. The central objective of this paper is to develop a technique suitable for characterizing both the negative BTI (NBTI) and positive BTI (PBTI) in SRAM. The key issues addressed include the SRAM relevant sensing Vg, measurement delay, capturing the upper envelope of degradation, sampling rate, and measurement time window. The differences between NBTI and PBTI are highlighted. The impact of NBTI and PBTI on the cell-level performance is assessed by simulation, based on experimental results obtained from individual devices. The simulation results show that, for a given static noise margin, test conditions have a significant effect on the minimum operation bias.
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