Maximizing Charge Injection Limits of Iridium Oxide Electrodes with a Programmable Anodic Bias Circuit.

Maximizing Charge Injection Limits of Iridium Oxide Electrodes with a Programmable Anodic Bias Circuit.
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DOI:
10.1109/ner49283.2021.9441282
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发表时间:
2021-05
期刊:
International IEEE/EMBS Conference on Neural Engineering : [proceedings]. International IEEE EMBS Conference on Neural Engineering
影响因子:
--
通讯作者:
Han M
Han M
中科院分区:
其他
文献类型:
--
作者:
Ersöz A;Kim I;Han M

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Efficacious stimulation of neural tissues requires high charge injection capacity while minimizing electrode polarization. Applying anodic bias on certain electrode materials is a way to enhance charge injection both in vitro and in vivo. We developed an embedded neurostimulator system that enabled a digital control of user-defined bias levels, without requiring a potentiometer or external voltage source. Comparison of charge injection with and without anodic-bias, as well as at different bias potentials were conducted in phosphate-buffered saline with Blackrock iridium oxide microelectrodes. Results showed that a nine-fold increase in current intensity and charge injection capacity, was achieved with a 0.7 V anodic bias and within electrochemically safe limits.
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