Improved slicing strategy for digital micromirror device-based three-dimensional lithography with a single scan
Improved slicing strategy for digital micromirror device-based three-dimensional lithography with a single scan
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改进的基于数字微镜器件的单次扫描三维光刻的切片策略
DOI：
10.1049/mnl.2016.0420
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发表时间：
2017
影响因子：
1.3
通讯作者：
Zhou Youquan
中科院分区：
文献类型：
--
作者：
Huang Shengzhou;Li Mujun;Shen Lianguan;Qiu Jinfeng;Zhou Youquan
为了提高三维微结构的轮廓质量，提出了一种基于数字光刻机的实时无掩模光刻方法。首先，为了计算设计中目标轮廓的曝光剂量空间分布，研究了曝光剂量与显影深度的关系。此外，还获得了合适的显影时间。其次，提出了一种基于等弧算法的改进切片策略，以减小轮廓误差。与传统的等曝光剂量方法不同，该方法产生的切片层由等曝光剂量变为等弧长。这种方法在获得一系列适应设计轮廓曲率变化的合适截面图案方面具有优势。最后，利用该方法和等曝光剂量法制作了非球面微透镜阵列。结果表明，在相同的切片数下，用该方法得到的组织轮廓与设计轮廓更加一致。实验结果还表明，该方法只需一半的切片数，就能获得与等曝光剂量法同样好的轮廓质量。这表明该方法是可行的，以获得良好的轮廓质量，切片效率显着提高。
To improve the profile quality of three-dimensional microstructures, an improved method was proposed in real-time maskless lithography based on digital micromirror device. First, to calculate the spatial distribution of exposure dose for the target profile in design, the relations of the exposure dose and the development depth were investigated. Moreover, a suitable development time was obtained. Second, an improved slicing strategy based on equal-arc algorithm was proposed to reduce the profile error. Different from traditional equal-expose-dose method, this method generated slicing layers with equal arc-length instead of equal-exposure dose. Such an approach has advantages in obtaining a series of suitable section patterns adapting to the curvature variation of the design profile. Finally, an aspheric microlens array was fabricated with this method and the equal-exposure-dose method. Results showed that the resulting microstructure profile by their method was more consistent with the design profile with the same slicing numbers. Moreover, results also showed that the method used can obtain as good profile quality as that of the equal-exposure-dose method with only a half of slicing numbers. This indicated that the proposed method is feasible for achieving good profile quality with slicing efficiency improved remarkably.
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影响因子：
2.3
作者：
Y. Hirai;Y. Inamoto;K. Sugano;T. Tsuchiya;O. Tabata
通讯作者：
Y. Hirai;Y. Inamoto;K. Sugano;T. Tsuchiya;O. Tabata
影响因子：
1.9
作者：
Hur, Jun-Gyu
通讯作者：
Hur, Jun-Gyu
影响因子：
3.9
作者：
Choi, Jae-Won;Wicker, Ryan B.;Lee, Seok-Hee
通讯作者：
Lee, Seok-Hee
影响因子：
2.7
作者：
Yong-Kyu Yoon;Jin-Woo Park;M. Allen
通讯作者：
Yong-Kyu Yoon;Jin-Woo Park;M. Allen
影响因子：
2.3
作者：
G. Jiang;S. Baig;Michael R. Wang
通讯作者：
G. Jiang;S. Baig;Michael R. Wang