Influence of GaCl carrier gas flow rate on properties of GaN films grown by hydride vapor-phase epitaxy
Influence of GaCl carrier gas flow rate on properties of GaN films grown by hydride vapor-phase epitaxy
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GaCl载气流量对氢化物气相外延生长GaN薄膜性能的影响
DOI：
10.1016/j.jallcom.2011.02.168
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发表时间：
2011-05
影响因子：
6.2
通讯作者：
Jiang, Minhua
中科院分区：
文献类型：
--
作者：
Shao, Yongliang;Zhang, Lei;Hao, Xiaopeng;Wu, Yongzhong;Chen, Xiufang;Qu, Shuang;Xu, Xiangang;Jiang, Minhua
研究了GaCl载气流速对氢化物气相外延（HVPE）生长GaN薄膜的影响。通过对称（0 0 0 2）和不对称(10-12)ω扫描来估计GaN薄膜的质量。利用室温光致发光光谱研究了其光学性质。利用拉曼光谱分析了样品中的残余应力。利用原子力显微镜（AFM）研究了氮化镓薄膜的表面形貌。在工艺优化的基础上，获得了制备高质量GaN膜的最佳GaCl载气流速为1.3 L/min。
The influence of GaCl carrier gas flow rate on GaN films grown by hydride vapor-phase epitaxy (HVPE) was investigated. The symmetric (0 0 0 2) and asymmetric (10–12)ωscans were detected to estimate the quality of GaN films. Optical properties were studied by room temperature photoluminescence spectra. Raman spectroscopy was employed to analyze the residual stress in the samples. The surface morphology of the GaN films was investigated by atomic force microscopy (AFM). On the basis of process optimization the optimal GaCl carrier gas flow rate for growth of high quality GaN films in our system was obtained as 1.3 L/min.
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影响因子：
1.8
作者：
Y. Kagamitani;T. Kuribayashi;K. Hazu;T. Onuma;D. Tomida;R. Simura;S. Chichibu;K. Sugiyama;C. Yokoyama;Toru Ishiguro;T. Fukuda
通讯作者：
Y. Kagamitani;T. Kuribayashi;K. Hazu;T. Onuma;D. Tomida;R. Simura;S. Chichibu;K. Sugiyama;C. Yokoyama;Toru Ishiguro;T. Fukuda
影响因子：
4
作者：
Chao, C. L.;Chiu, C. H.;Cheng, S. J.
通讯作者：
Cheng, S. J.
影响因子：
1.8
作者：
Huang, Hsin-Hsiung;Chao, Chu-Li;Lee, Wei-I
通讯作者：
Lee, Wei-I
影响因子：
1.8
作者：
I. Grzegory;M. Boćkowski;P. Strak;S. Krukowski;S. Porowski
通讯作者：
I. Grzegory;M. Boćkowski;P. Strak;S. Krukowski;S. Porowski
影响因子：
2.1
作者：
Xiancun Cao;Dan Xu;Haomin Guo;Cunding Liu;Z. Yin;Xue Li;Kai Qiu;W. Yunping
通讯作者：
Xiancun Cao;Dan Xu;Haomin Guo;Cunding Liu;Z. Yin;Xue Li;Kai Qiu;W. Yunping