Highly efficient near-infrared light-emitting diodes by using type-II CdTe/CdSe core/shell quantum dots as a phosphor
Highly efficient near-infrared light-emitting diodes by using type-II CdTe/CdSe core/shell quantum dots as a phosphor
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使用II型CdTe/CdSe核/壳量子点作为荧光粉的高效近红外发光二极管
DOI:
10.1088/0957-4484/24/47/475603
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发表时间:
2013-11
期刊:
影响因子:
3.5
通讯作者:
Lin Song Li
中科院分区:
文献类型:
--
作者:
Yixing Yang;Alex;re Titov;Jake Hyvonen;Lin Song Li
In this paper, we present an innovative method for the synthesis of CdTe/CdSe type-II core/shell structure quantum dots (QDs) using ‘greener’ chemicals. The PL of CdTe/CdSe type-II core/shell structure QDs ranges from 600 to 820 nm, and the as-synthesized
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