Negative Tone Metallic Organic Resists with Improved Sensitivity for Plasma Etching: Implications for Silicon Nanostructure Fabrication and Photomask Production.
Negative Tone Metallic Organic Resists with Improved Sensitivity for Plasma Etching: Implications for Silicon Nanostructure Fabrication and Photomask Production.
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DOI：
10.1021/acsanm.2c02986
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发表时间：
2022-12-23
影响因子：
5.9
通讯作者：
Winpenny, Richard E. P.
中科院分区：
文献类型：
--
作者：
Chaker, Ahmad;Alty, Hayden A.;Winpenny, Paul;Whitehead, George F. S.;Timco, Grigore A.;Lewis, Scott M.;Winpenny, Richard E. P.
金属-有机材料，如[NH2(CH2-CH=CH2)2][Cr7NiF8(Pivalate)16]可用作电子束光刻(EBL)的负色调抗蚀剂，具有低于40纳米间距的高分辨率图形，同时具有超高的干法刻蚀选择性>；100：1，并提供线剂量曝光>；11,000 pC/cm。显然，抗蚀剂的感光度太低，不能用于制造最新的纳米级光掩模，这些掩模适合于极端紫外线光刻。因此，这项工作的重点是在保持其分辨率和干法刻蚀选择性的同时，提高这种抗蚀剂的灵敏度。使用我们最新的蒙特卡罗模拟，我们预测，当镍原子被镉原子取代时，灵敏度将增加1.4倍。EBL研究表明与模拟结果非常吻合，而等离子体刻蚀研究表明，这并不影响抗蚀剂的干法刻蚀性能，对于在这些分辨率下以7995pC/cm的低灵敏度刻蚀硅，选择约99：1的刻蚀性能仍然非常好。
Metal–organic materials such as [NH2(CH2–CH=CH2)2][Cr7NiF8(Pivalate)16] can act as negative tone resists for electron beam lithography (EBL) with high-resolution patterning of sub-40 nanometer pitch while exhibiting ultrahigh dry etch selectivities >100:1 and giving line dose exposures >11,000 pC/cm. It is clear that the resist sensitivity is too low to be used to manufacture the latest nanoscale photomasks that are suitable for extreme ultraviolet lithography. Therefore, the focus of this work here is to improve the sensitivity of this resist while maintaining its resolution and dry etch selectivity. Using our latest Monte Carlo simulation called Excalibur, we predict that the sensitivity would increase by a factor of 1.4 when the nickel atom is substituted by a cadmium atom. EBL studies showed an excellent agreement with the simulation, and plasma etching studies demonstrated that this did not affect the dry etch performance of the resist which remains very good with a selectively of ca. 99:1 for the etching of silicon at these resolutions with a low sensitivity of 7995 pC/cm.
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影响因子：
1.4
作者：
Tavakkoli K. G, A.;Piramanayagam, S. N.;Chong, T. C.
通讯作者：
Chong, T. C.
影响因子：
1.4
作者：
Czaplewski, David A.;Ocola, Leonidas E.
通讯作者：
Ocola, Leonidas E.
影响因子：
16.6
作者：
Lewis, Scott M.;Fernandez, Antonio;Winpenny, Richard E. P.
通讯作者：
Winpenny, Richard E. P.
影响因子：
1.4
作者：
Wüest, R;Strasser, P;Jäckel, H
通讯作者：
Jäckel, H
影响因子：
1.4
作者：
Fallica, Roberto;Kazazis, Dimitrios;Ekinci, Yasin
通讯作者：
Ekinci, Yasin