Self-powered, visible-blind ultraviolet photodetector based on n-ZnO nanorods/i-MgO/p-GaN structure light-emitting diodes
Self-powered, visible-blind ultraviolet photodetector based on n-ZnO nanorods/i-MgO/p-GaN structure light-emitting diodes
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基于n-ZnO纳米棒/i-MgO/p-GaN结构发光二极管的自供电可见盲紫外光电探测器
DOI：
10.1039/c4tc02390k
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发表时间：
2015-01
影响因子：
6.4
通讯作者：
Fang Guojia
中科院分区：
文献类型：
--
作者：
Zhou Hai;Gui Pengbin;Yu Qiuheng;Mei Jun;Wang Hao;Fang Guojia
报道了一种基于n-氧化锌纳米棒(NRS)/i-MgO/p-GaN结构、由p-GaN组装的发光二极管和溶液处理的i-MgO/n-ZnO纳米棒的自供电、可见盲的紫外光探测器。结果表明，在光密度为11.2μw cm−2的365 nm紫外光照射下，具有氧化镁插层的器件具有良好的紫外光伏安性能，其开路电压和短路电流分别为1.02V和510nA。在365 nm处，光电流与暗电流之比高达8000，紫外光-可见响应比(R350 nm/R500 nm)达到34.5，表现出良好的可见光响应特性。此外，具有氧化镁插入层的器件在254 nm处的响应度比n-ZnO NRS/p-GaN异质结的响应度大5倍。此外，n-ZnO NRS/i-MgO/p-GaN异质结在正向偏压下表现出电致发光特性，并用高斯函数的峰值去卷积方法进行了分析。
A self-powered, visible-blind ultraviolet (UV) photodetector based on an n-ZnO nanorod (NRs)/i-MgO/p-GaN structure, light-emitting diode assembled by p-GaN and solution-processed i-MgO/n-ZnO nanorods is reported. We found that the device with a MgO insertion layer under 365 nm UV illumination with the light density of 11.2 μw cm−2 showed good UV photovoltaic properties with the open-circuit voltage and short-circuit current of 1.02 V and 510 nA, respectively. It showed good visible-blind UV photo-response characteristic with the ratio of photocurrent to dark current to as high as 8000 at 365 nm and the UV-visible responsivity ratio (R350 nm/R500 nm) reached 34.5. Moreover, the responsivity of the device with MgO insertion layer was 5 times greater than that of a n-ZnO NRs/p-GaN heterojunction at 254 nm. Furthermore, the n-ZnO NRs/i-MgO/p-GaN heterojunction can display electroluminescence characteristic at a forward bias, which was analyzed by the peak-deconvolution with Gaussian functions.
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影响因子：
19
作者：
Wang, Zhong Lin
通讯作者：
Wang, Zhong Lin
在氧化锌中实现的超低阈值激光
影响因子：
29.4
作者：
Zhu, Hai;Shan, Chong-Xin;Tong, Zi-Kang
通讯作者：
Tong, Zi-Kang
影响因子：
--
作者：
Alvi NH;Ul Hasan K;Nur O;Willander M
通讯作者：
Willander M
影响因子：
17.1
作者：
F. Schuster;B. Laumer;R. Zamani;C. Magén;J. Morante;J. Arbiol;M. Stutzmann
通讯作者：
F. Schuster;B. Laumer;R. Zamani;C. Magén;J. Morante;J. Arbiol;M. Stutzmann
影响因子：
4
作者：
Dong, J. J.;Zhang, X. W.;Liu, X.
通讯作者：
Liu, X.