A 300-V Ultra-Low-Specific On-Resistance High-Side p-LDMOS With Auto-Biased n-LDMOS for SPIC
A 300-V Ultra-Low-Specific On-Resistance High-Side p-LDMOS With Auto-Biased n-LDMOS for SPIC
复制标题
适用于 SPIC 的具有自动偏置 n-LDMOS 的 300V 超低比导通电阻高侧 p-LDMOS
DOI：
10.1109/tpel.2016.2524024
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发表时间：
2017
影响因子：
6.7
通讯作者：
Chen Xingbi
中科院分区：
文献类型：
--
作者：
Yi Bo;Chen Xingbi
本文提出了一种基于Triple-RESURF技术的高端p沟道LDMOS(PLDMOS)和自偏置n沟道LDMOS(n-LDMOS)。P-LDMOS利用两个载流子来传导导通电流；因此，由于电子迁移率高得多，比导通电阻(RON，SP)可以大大降低。模拟结果表明，所提出的300Vp-LDMOS的RON，sp值为16.97mΩ/cm2，与三重RESURF硅限值相比降低了约65%，与优化的n-LDMOS相当(BV=340V，RON，sp值=18mΩ/cm2)。此外，由于电流容量较大，所提出的p-LDMOS的有效面积仅为优化的Triple-RESURF p-LDMOS的三分之一左右。与优化后的Triple-RESURF p-LDMOS相比，其开启时间(TR)和关断时间(Tf)分别降低了51.2%和40.0%。
In this paper, a high-side p-channel LDMOS (pLDMOS) with an auto-biased n-channel LDMOS (n-LDMOS) based on Triple-RESURF technology is proposed. The p-LDMOS utilizes both carriers to conduct the on-state current; therefore, the specific on-resistance (Ron,sp) can be much reduced because of much higher electron mobility. The simulation result shows that the proposed 300-V p-LDMOS obtains a Ron,sp of 16.97 mΩ/cm2, which is about 65% reduced compared with the Triple-RESURF silicon limit and is comparable to an optimized n-LDMOS (BV = 340 V, Ron,sp = 18 mΩ/cm2). In addition, due to larger current capability, the active area of the proposed p-LDMOS is only about one third of an optimized Triple-RESURF p-LDMOS. The turn-on (tr) and turn-off time (tf) are reduced by 51.2% and 40.0%, compared to the optimized Triple-RESURF p-LDMOS, respectively.
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影响因子：
3.1
作者：
Shimamoto, Satoshi;Yanagida, Yohei;Noguchi, Junji
通讯作者：
Noguchi, Junji
DOI：
10.1109/ispsd.2011.5890784
发表时间：
2011-05
期刊：
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs
影响因子：
--
作者：
M. Sambi;D. Merlini;P. Galbiati;E. Bonera;F. Belletti
通讯作者：
M. Sambi;D. Merlini;P. Galbiati;E. Bonera;F. Belletti
影响因子：
6.7
作者：
Xi Zhang;Lei Jiang;Junjun Deng;Siqi Li;Zheng Chen
通讯作者：
Xi Zhang;Lei Jiang;Junjun Deng;Siqi Li;Zheng Chen
DOI：
10.1109/iedm.2000.904264
发表时间：
2000-12
期刊：
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)
影响因子：
--
作者：
Y. Chung;B. Baird
通讯作者：
Y. Chung;B. Baird
影响因子：
3.1
作者：
M. Qiao;Yuru Wang;Xin Zhou;Feng Jin;Huihui Wang;Zhuo Wang;Zhaoji Li;Bo Zhang
通讯作者：
M. Qiao;Yuru Wang;Xin Zhou;Feng Jin;Huihui Wang;Zhuo Wang;Zhaoji Li;Bo Zhang