A RF Redundant TSV Interconnection for High Resistance Si Interposer.
A RF Redundant TSV Interconnection for High Resistance Si Interposer.
复制标题
DOI：
10.3390/mi12020169
复制
发表时间：
2021-02-08
期刊：
影响因子：
3.4
通讯作者：
He S
中科院分区：
文献类型：
--
作者：
Wang M;Ma S;Jin Y;Wang W;Chen J;Hu L;He S
硅通孔（TSV）技术能够满足高效、紧凑、高密度、高集成度和高性能的要求。在高频应用中，随着5G和毫米波雷达的快速发展，TSV中介层将成为射频系统级封装（RF SIP）基板的竞争选择。本文提出了一种冗余TSV互连设计的高电阻率硅插入毫米波应用。为了验证其可行性，设计了一套工作在毫米波波段的测试结构，该结构由三条共面波导（CPW）线组成，分别通过单TSV、双冗余TSV和四冗余TSV互连线连接。首先利用HFSS软件进行建模和仿真，然后建立改进的等效电路模型，分析冗余TSV对高频传输性能的影响，以巩固基于HFSS的仿真。同时进行了失效模拟，结果表明，当失效发生时，冗余TSV在44 GHz频率下仍能正常工作。使用开发的TSV工艺，然后制造和测试样品。采用L-2L去嵌入方法提取TSV互连线的S参数。双冗余和四冗余TSV的插入损耗在40 GHz时分别为0.19 dB和0.46 dB。
Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.
登录
查看更多内容
DOI：
10.1109/tvlsi.2011.2107924
发表时间：
2012-04-01
影响因子：
2.8
作者：
Hsieh, Ang-Chih;Hwang, TingTing
通讯作者：
Hwang, TingTing
DOI：
10.1109/tcpmt.2010.2101890
发表时间：
2011-02-01
影响因子：
2.2
作者：
Kim, Joohee;Pak, Jun So;Kim, Joungho
通讯作者：
Kim, Joungho
DOI：
10.1109/tcpmt.2010.2099731
发表时间：
2011-02-01
影响因子：
2.2
作者：
Hu, Sanming;Wang, Lei;Yuan, Xiaojun
通讯作者：
Yuan, Xiaojun
影响因子：
2.7
作者：
Hasan, Md. Mehedi;Faruque, Mohammad Rashed Iqbal;Islam, Mohammad Tariqul
通讯作者：
Islam, Mohammad Tariqul
DOI：
10.1109/tcpmt.2016.2631731
发表时间：
2017-01-01
影响因子：
2.2
作者：
Jung, Daniel H.;Kim, Youngwoo;Kim, Joungho
通讯作者：
Kim, Joungho