Barrierless Cu-Ni-Mo Interconnect Films with High Thermal Stability Against Silicide Formation
Barrierless Cu-Ni-Mo Interconnect Films with High Thermal Stability Against Silicide Formation
复制标题
具有高热稳定性、防止硅化物形成的无障碍 Cu-Ni-Mo 互连薄膜
DOI：
10.1007/s11664-012-2260-x
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发表时间：
2012-09
影响因子：
2.1
通讯作者：
Dong, C.
中科院分区：
文献类型：
--
作者：
Zhang, X. Y.;Chu, J. P.;Wang, Q.;Dong, C.
研究了Cu-Ni-Mo合金以增加对硅化物形成的热稳定性。选择合金组成使得不溶性元素（Mo）溶质经由可溶于Cu和Ni两者的第三元素Ni溶解到Cu中。采用磁控溅射法制备了Cu-Ni-Mo合金薄膜。Mo/Ni比为1/12的膜表现出低的电导率与高的热稳定性对硅化物的形成相结合，在支持一个试探性的“簇加胶原子”模型稳定的固溶体。特别地，（Mo 1/13 Ni 12/13）0.3Cu 99.7样品在400°C/1 h退火后达到2.6μΩ cm的最小电阻率，并且即使在400°C/40 h退火后仍保持高导电性，电阻率低于3μΩ cm。这些合金是未来互连材料的有前途的候选者。
Cu-Ni-Mo alloys were investigated to increase thermal stability against silicide formation. The alloy compositions were chosen such that an insoluble element (Mo) solute was dissolved into Cu via a third element Ni which is soluble in both Cu and Ni. Thin-film Cu-Ni-Mo alloys were prepared by magnetron sputtering. The films with Mo/Ni ratio of 1/12 exhibited low electrical resistivities in combination with high thermal stabilities against silicide formation, in support of a tentative “cluster-plus-glue-atom” model for stable solid solutions. In particular, a (Mo1/13Ni12/13)0.3Cu99.7sample reached a minimum resistivity of 2.6μΩ cm after 400°C/1 h annealing and remained highly conductive with resistivities below 3μΩ cm even after 400°C/40 h annealing. These alloys are promising candidates for future interconnect materials.
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影响因子：
3.2
作者：
C. Liu;Lun-Lun Chen-Lun
通讯作者：
C. Liu;Lun-Lun Chen-Lun
影响因子：
4.5
作者：
Y. Ko;J. H. Jang;S. Lee;H. J. Yang;W. Lee;P. J. Reucroft;J. Lee
通讯作者：
Y. Ko;J. H. Jang;S. Lee;H. J. Yang;W. Lee;P. J. Reucroft;J. Lee
影响因子：
4
作者：
L. Nie;X. Li;J. Chu;Qingyi Wang;Chun-Hung Lin;C. Dong
通讯作者：
L. Nie;X. Li;J. Chu;Qingyi Wang;Chun-Hung Lin;C. Dong
影响因子：
6.7
作者：
Qi Xie;X. Qu;J. Tan;Yu-Long Jiang;Mi Zhou;Tao Chen;G. Ru
通讯作者：
Qi Xie;X. Qu;J. Tan;Yu-Long Jiang;Mi Zhou;Tao Chen;G. Ru
影响因子：
4
作者：
J. Chu;C. Lin;V. John
通讯作者：
J. Chu;C. Lin;V. John