Single-beam ion source enhanced growth of transparent conductive thin films
Single-beam ion source enhanced growth of transparent conductive thin films
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单束离子源增强透明导电薄膜的生长
DOI：
10.1088/1361-6463/ac7f01
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Fan, Qi Hua
中科院分区：
文献类型：
--
作者：
Tran, Thanh;Kim, Young;Baule, Nina;Shrestha, Maheshwar;Zheng, Bocong;Wang, Keliang;Schuelke, Thomas;Fan, Qi Hua
研制了一种单束离子源，并将其与磁控溅射相结合来调制薄膜的微观结构。离子源发射一束离子与沉积膜相互作用，同时增强磁控管放电。当离子源的电压在0到150 V之间变化时，磁控管电压可以在大约240到130 V的宽范围内调节，而磁控管电流也相应增加。低电压大电流磁控管放电实现了“软溅射模式”，有利于薄膜的生长。采用单束离子源和磁控溅射相结合的方法在室温下制备了氧化铟锡（ITO）薄膜。离子束导致形成多晶ITO薄膜，其电阻率和表面粗糙度显著降低。单束离子源增强磁控溅射在薄膜的低温生长方面有许多潜在的应用，例如有机太阳能电池的涂层。
A single-beam ion source was developed and used in combination with magnetron sputtering to modulate the film microstructure. The ion source emits a single beam of ions that interact with the deposited film and simultaneously enhances the magnetron discharge. The magnetron voltage can be adjusted over a wide range, from approximately 240 to 130 V, as the voltage of the ion source varies from 0 to 150 V, while the magnetron current increases accordingly. The low-voltage high-current magnetron discharge enables a'soft sputtering mode', which is beneficial for thin-film growth. Indium tin oxide (ITO) thin films were deposited at room temperature using a combined single-beam ion source and magnetron sputtering. The ion beam resulted in the formation of polycrystalline ITO thin films with significantly reduced resistivity and surface roughness. Single-beam ion-source-enhanced magnetron sputtering has many potential applications in which low-temperature growth of thin films is required, such as coatings for organic solar cells.
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DOI：
10.1007/s00339-017-1501-5
发表时间：
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期刊：
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DOI：
10.1116/1.580179
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期刊：
影响因子：
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