Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.
Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.
复制标题
DOI：
10.1038/srep37588
复制
发表时间：
2016-11-21
影响因子：
4.6
通讯作者：
Bayram C
中科院分区：
文献类型：
--
作者：
Lee HP;Perozek J;Rosario LD;Bayram C
AlGaN/GaN高电子迁移率晶体管（HEMT）结构通过使用三种不同的缓冲层配置在200 mm直径的Si（111）衬底上生长：（a）厚GaN/3 × {AlxGa 1 −xN}/AlN，（B）薄GaN/3 × {AlxGa 1 −xN}/AlN，和（c）薄GaN/AlN，从而具有无裂纹和低弯曲（<50 μm）晶片。扫描电子显微镜、能量色散X射线光谱、高分辨率截面透射电子显微镜、光学显微镜、原子力显微镜、阴极射线发光、拉曼光谱、X射线衍射采用ω/2θ扫描和对称/非对称ω扫描（摇摆曲线扫描）、倒易空间映射和霍尔效应测量研究了该薄膜的结构、光学、和这些AlGaN/GaN HEMT结构的电学性质。缓冲层堆叠（即厚度和内容）的缺陷率，应力和二维电子气（2DEG）的迁移率和2DEG浓度的影响。结果表明，AlGaN/GaN HEMT结构与Si（111）衬底之间的缓冲层对2DEG特性有很大影响。特别地，我们报告了GaN层中的面内应力显著地影响2DEG迁移率和2DEG载流子浓度。缓冲层的设计对于在Si（111）衬底上获得高的2DEG迁移率（>1800 cm 2/V·s）和2DEG载流子浓度（>1.0 × 1013 cm−2）至关重要。
AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1−xN}/AlN, (b) Thin-GaN/3 × {AlxGa1−xN}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross section transmission electron microscopy, optical microscopy, atomic-force microscopy, cathodoluminescence, Raman spectroscopy, X-ray diffraction (ω/2θ scan and symmetric/asymmetric ω scan (rocking curve scan), reciprocal space mapping) and Hall effect measurements are employed to study the structural, optical, and electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm2/V∙s) and 2DEG carrier concentration (>1.0 × 1013 cm−2) on Si(111) substrates.
登录
查看更多内容
影响因子：
1.8
作者：
Mathis, SK;Romanov, AE;Speck, JS
通讯作者：
Speck, JS
影响因子：
3.2
作者：
Mohan, Nagaboopathy;Manikant;Raghavan, Srinivasan
通讯作者：
Raghavan, Srinivasan
影响因子：
1.5
作者：
Nanjo, Takuma;Motoya, Tsukasa;Tokuda, Yasunori
通讯作者：
Tokuda, Yasunori
影响因子：
2.1
作者：
Bayram, C.;Pau, J. L.;Razeghi, M.
通讯作者：
Razeghi, M.
影响因子：
10.9
作者：
Ferreira, NG;Abramof, E;Trava-Airoldi, VJ
通讯作者：
Trava-Airoldi, VJ