Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si
Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si
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扩展缺陷对在图案化 Si 上生长的 (1-101)GaN 光学性能的影响
DOI：
10.1117/12.2040621
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Ü. Özgür
中科院分区：
文献类型：
--
作者：
S. Okur;N. Izyumskaya;F. Zhang;V. Avrutin;S. Metzner;C. Karbaum;F. Bertram;J. Christen;H. Morkoç;Ü. Özgür
半极性（1101）GaN层的光学质量进行了探索，通过时间和偏振分辨光致发光光谱。高强度的带边发射被观察到在+C-翼区域的条纹作为更好的结构质量的结果，而C-翼区域被发现是较差的光学质量，由于基面和棱镜堆垛层错（BSFs和PSFs）除了高密度的TD。在+cwings上形成的高光学质量区域也从慢得多的双指数PL衰减（0.22 ns和1.70 ns）和与-c-wing区域相比小一个数量级的快衰减（非辐射源）与慢衰减分量（辐射源）的幅度比中得到证明。在缺陷相关发射方面，25 K下BSF和PSF发射线的衰减时间（分别为~ 0.80 ns和~ 3.5 ns）与所采用的范围（5 - 420 W/cm 2）内的激发密度无关，并且远长于施主束缚激子的衰减时间（在5 W/cm 2下为0.13 ns，在420 W/cm 2下为0.22 ns）。同时还发现，BSF的发光偏振度（0.22）比施主束缚激子的发光偏振度（0.35）低。当光生载流子在BSF内复合时，偏振度的减小是堆垛层错对半极性（1101）GaN的光学质量的负面影响的另一个指示。此外，半极性（1101）取向的InGaN有源区层生长在条纹图案化的Si衬底上的缺陷的空间分布进行了研究，使用近场扫描光学显微镜。的光学质量的c翼区域被认为是更差的+c翼区域相比，由于存在更高密度的堆垛层错和螺纹位错。来自+c-翼的发射非常明亮并且在整个样品上相对均匀，这指示均匀的In分布。
The optical quality of semipolar (1 101)GaN layers was explored by time- and polarization-resolved photoluminescence spectroscopy. High intensity bandedge emission was observed in+c-wing regions of the stripes as a result of better structural quality, while-c-wing regions were found to be of poorer optical quality due to basal plane and prismatic stacking faults (BSFs and PSFs) in addition to a high density of TDs. The high optical quality region formed on the+cwings was evidenced also from the much slower biexponential PL decays (0.22 ns and 1.70 ns) and an order of magnitude smaller amplitude ratio of the fast decay (nonradiative origin) to the slow decay component (radiative origin) compared to the-c-wing regions. In regard to defect-related emission, decay times for the BSF and PSF emission lines at 25 K (~ 0.80 ns and ~ 3.5 ns, respectively) were independent of the excitation density within the range employed (5 – 420 W/cm2), and much longer than that for the donor bound excitons (0.13 ns at 5 W/cm2and 0.22 ns at 420 W/cm2). It was also found that the emission from BSFs had lower polarization degree (0.22) than that from donor bound excitons (0.35). The diminution of the polarization degree when photogenerated carriers recombine within the BSFs is another indication of the negative effects of stacking faults on the optical quality of the semipolar (1101)GaN. In addition, spatial distribution of defects in semipolar (1101)-oriented InGaN active region layers grown on stripe patterned Si substrates was investigated using near-field scanning optical microscopy. The optical quality of-c- wing regions was found to be worse compared to+c-wing regions due to the presence of higher density of stacking faults and threading dislocations. The emission from the+c-wings was very bright and relatively uniform across the sample, which is indicative of a homogeneous In distribution.
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DOI：
10.1007/978-3-642-58562-3
发表时间：
1999
期刊：
--
影响因子：
--
作者：
H. Morkoç
通讯作者：
H. Morkoç
通过选择性 MOVPE 在 7 度偏向 (0 0 1)Si 衬底上生长 ( 1 1 0 1 ) GaN
影响因子：
8.8
作者：
Y. Honda;N. Kameshiro;M. Yamaguchi;N. Sawaki
通讯作者：
N. Sawaki
具有非极性表面的氮化物
影响因子：
8.8
作者：
T. Paskova
通讯作者：
T. Paskova
在 7° 离轴 (001)Si 衬底上生长的 (1-101)GaN 的光学和电学特性
DOI：
--
发表时间：
2004
期刊：
Appl.Phys.Lett. 84・23
影响因子：
--
作者：
K. Hayashi;S. Mizuno;S. Tanaka;H. Toyoda;H. Tochihara;I. Suemune;T.Hikosaka
通讯作者：
T.Hikosaka
半极性 (11-22) GaN 在 GaN 模板 (113) Si 衬底上的 HVPE 生长
DOI：
--
发表时间：
2008
期刊：
影响因子：
--
作者：
Y. Suzuki;他
通讯作者：
他