Fictitious Particle Approach for Light Scattering Investigation from the Line Features of a Substrate Based on the Discrete Sources Method

Fictitious Particle Approach for Light Scattering Investigation from the Line Features of a Substrate Based on the Discrete Sources Method
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基于离散源法的基底线特征光散射研究的虚拟粒子方法

DOI:
10.1007/978-3-319-74890-0_4
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发表时间:
2018
期刊:
影响因子:
--
通讯作者:
Thomas Wriedt
Thomas Wriedt
中科院分区:
--
文献类型:
--
作者:
Yuri A. Eremin;Thomas Wriedt

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计算机模拟平面界面特征的光散射在半导体和纳米电子工业中具有重要意义。硅衬底上的亚微米缺陷的检测和表征的在线激光扫描表面检测系统。用于预测这种光散射的可靠计算机模型将为高效的表面特征检测和区分提供灵活而有效的工具。基于离散源法(DSM),提出并实现了一种新的虚拟粒子概念。基于这一概念,一个更新的DSM计算机模型能够分析光散射从线缺陷的平面硅衬底,如线凸点和坑。对应于散射截面(SCS)的计算机模拟结果 的P/S极化激发。结果表明,总散射截面(TSC) 可以根据线性特征相对于平面波入射方向的取向而改变一个数量级。
Computer simulation of light scattering from features on plane interfaces is of interest in the semiconductor and nanoelectronic industry. Submicrometer defects on silicon substrates are detected and characterized by in-line laser scanning surface inspection systems. A reliable computer model for predicting this light scattering would provide a flexible and efficient tool for efficient surface features detection and discrimination. Based on the Discrete Sources Method (DSM) a new fictitious particle concept has been elaborated and realized. Based on this conception an updated DSM computer model enables to analyze light scattering from line defects of a plane silicon substrate such as a line bump and a pit. Computer simulation results corresponding to the Scattering Cross-Section (SCS) for P/S polarized excitation are presented. It was found that the Total Scattering Cross-Section (TSC) can be change by an order of magnitude depending on the orientation of the linear feature with respect to the plane wave incident direction.
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