High-performance IGZO/Ga2O3 dual-active-layer thin film transistor for deep UV detection
High-performance IGZO/Ga2O3 dual-active-layer thin film transistor for deep UV detection
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用于深紫外检测的高性能IGZO/Ga2O3双有源层薄膜晶体管
DOI：
10.1063/5.0089038
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发表时间：
2022-06
影响因子：
4
通讯作者：
Zengxia Mei
中科院分区：
文献类型：
--
作者：
Zuyin Han;Shuang Song;Huili Liang;Hang Shao;Sigui Hu;Yan Wang;Jiwei Wang;Zengxia Mei
非晶态Ga2 O3(a-Ga2 O3)由于其固有的宽禁带和高均匀性，在大面积深紫外光传感器阵列方面具有很大的工业潜力。然而，高响应性和长期持续的光电导性之间似乎不可调和的矛盾阻碍了这类设备的发展步伐。为了实现a-Ga2O_3作为有源层的开关和传感能力，研制了三端InGaZnO(IGZO)/a-Ga2O_3双有源层(DAL)晶体管。由于引入了超薄的IGZO电子库和a-Ga2 O3的缺陷控制，DAL器件表现出了更稳定和更优越的栅控能力，包括∼10 8和⋅S 8.3cm2/V的高开关比和场效应迁移率，以及0.36V/dec的小亚阈值摆幅(SS)。在2 5 4 nm紫外光照射下，DAL器件的光暗比为∼10 8，响应率为4.8×10 3A W−1，探测率为8×10 15琼斯，紫外可见抑制比(R2 54/R4 0 0)为。A-Ga2 O3材料同时实现了深紫外光检测和晶体管的开关性能，为以简单、低成本的工艺构建大面积有源矩阵紫外光传感器阵列提供了良好的潜力。
Owing to the intrinsically wide bandgap and high uniformity, amorphous Ga 2 O 3 (a-Ga 2 O 3 ) has been illustrating a great industrial potential for large-area deep ultraviolet (UV) photosensor arrays. However, a seemingly irreconcilable contradiction between high responsivity and long persistent photoconductivity has hampered the growing pace of such devices. In this work, three-terminal InGaZnO (IGZO)/a-Ga 2 O 3 dual-active-layer (DAL) transistors were developed to realize the ability of a-Ga 2 O 3 as the active layer both in switching and sensing. Benefitting from the introduction of ultrathin IGZO electron reservoir and defect control of a-Ga 2 O 3 , the DAL device demonstrates more stable and superior gate-control capability with promising performance including high on/off ratio and field-effect mobility of ∼10 8 and 8.3 cm 2 /V⋅s, respectively, as well as a small sub-threshold swing (SS) of 0.36 V/dec. Under 254 nm UV illumination, the DAL device manifests a light-to-dark ratio of ∼10 8 , a responsivity of 4.8 × 10 3 A W −1 , a detectivity of 8 × 10 15 Jones, and a UV/visible rejection ratio (R 254 /R 400 ) of 64. The simultaneous achievement of deep UV photo-detection and transistor's switching performance in a-Ga 2 O 3 material offers excellent potential for the construction of large-area active-matrix UV photosensor arrays with the simple and low-cost fabrication process.
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