High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels
High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels
复制标题
具有多导通通道的高压沟槽栅极空穴气体增强型HEMT
DOI：
10.1007/s11432-017-9198-1
复制
发表时间：
2017-11
期刊：
影响因子：
--
通讯作者：
Zhang Bo
中科院分区：
文献类型：
--
作者：
Yang Chao;Luo Xiaorong;Deng Siyu;Peng Fu;Zhang Bo
In this paper, we present a novel high-voltage low on-resistance trench-gate (TG) hole-gas enhancement-mode (E-mode) high-electron mobility transistor (HEMT) with multi-conduction channels (MCs) and investigate its mechanism using simulations. This device features a repetitive AlN/GaN heterojunction unit and a GaN/Al0.26Ga0.74N hetero-junction. Its source and drain are located on the same side of the metal-insulator-semiconductor (MIS) TG, and the source is located beside the gate. During operation, first, 2-D electron gas (2DEG) forms MCs at multiple AlN/GaN hetero-interfaces. These MCs result in ultra-low specific on-resistance (Ron,sp) and improved transconductance (gm). Second, 2-D hole gas (2DHG) is induced at the GaN/Al0.26Ga0.74N hetero-interface to prevent electrons from being injected from the source to the MCs. As such, E-mode operation is realized, which exceeds the performance of the conventional E-mode method by depleting the 2DEG under the gate. Third, in the off-state, 2DHG and 2DEG are depleted into negative and positive charges, respectively, thereby forming the polarization junction. This depletion region is extended due to the electric field (E-field) modulation effect by the polarization junction, thereby achieving an enhanced breakdown voltage (BV). Fourth, the drain-induced barrier lowering (DIBL) effect is significantly suppressed, which ensures a high BV and low leakage current. Additionally, due to the unique source location, the TG-MC-HEMT is smaller than the conventional MIS AlGaN/GaN HEMT (Con-HEMT). The BV of the TG-MC-HEMT is 604 V and theRon,spvalue can be as small as 0.38 mΩ·cm2.
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影响因子：
3.1
作者：
Wei, Jin;Jiang, Huaping;Chen, Kevin J.
通讯作者：
Chen, Kevin J.
影响因子：
4.9
作者：
Hung, Ting-Hsiang;Park, Pil Sung;Rajan, Siddharth
通讯作者：
Rajan, Siddharth
影响因子：
8.8
作者：
Xiong, Jiayun;Yang, Chao;Luo, Xiaorong
通讯作者：
Luo, Xiaorong
影响因子：
3.1
作者：
Su, Liang-Yu;Lee, Finella;Huang, Jian Jang
通讯作者：
Huang, Jian Jang
DOI：
10.1109/iedm.2006.346930
发表时间：
2006-12
期刊：
2006 International Electron Devices Meeting
影响因子：
--
作者：
Y. Uemoto;M. Hikita;H. Ueno;H. Matsuo;H. Ishida;M. Yanagihara;T. Ueda;T. Tanaka;D. Ueda
通讯作者：
Y. Uemoto;M. Hikita;H. Ueno;H. Matsuo;H. Ishida;M. Yanagihara;T. Ueda;T. Tanaka;D. Ueda