Tail state mediated conduction in zinc tin oxide thinfilm phototransistors under below bandgap optical excitation.
Tail state mediated conduction in zinc tin oxide thinfilm phototransistors under below bandgap optical excitation.
复制标题
带隙以下光激发下氧化锌锡薄膜光电晶体管的尾态介导传导。
DOI：
10.1038/s41598-021-98339-4
复制
发表时间：
2021-09-24
影响因子：
4.6
通讯作者：
Lynch SA
中科院分区：
文献类型：
--
作者：
Dhara S;Niang KM;Flewitt AJ;Nathan A;Lynch SA
我们报道了锌锡氧化物（ZTO）薄膜光电晶体管中强持久光电导率（PPC）和类导体行为的出现。采用远程等离子体反应溅射法制备了具有非晶结构的有源ZTO沟道层。在紫外光的亚带隙激发下，ZTO的光电流高达~ 10−4 A（光暗比为~ 107），并且在关光后仍保持在这个高值附近。在此期间，中通TFT表现出较强的PPC和较长的恢复时间，这导致了中通半导体类导体行为的出现。在这种情况下，电导率变化超过6个数量级，从~ 10−7到0.92/Ω/cm。在紫外线照射后，ZTO化合物可以潜在地保持在导电状态长达一个月。利用放电电流分析（DCA）技术研究缺陷（深态和尾态），研究了PPC效应的基本物理性质。DCA研究的发现揭示了中电偶极子带隙尾态参与强PPC的直接证据，而深态参与轻度PPC。
We report on the appearance of a strong persistent photoconductivity (PPC) and conductor-like behaviour in zinc tin oxide (ZTO) thinfilm phototransistors. The active ZTO channel layer was prepared by remote plasma reactive sputtering and possesses an amorphous structure. Under sub-bandgap excitation of ZTO with UV light, the photocurrent reaches as high as ~ 10−4 A (a photo-to-dark current ratio of ~ 107) and remains close to this high value after switching off the light. During this time, the ZTO TFT exhibits strong PPC with long-lasting recovery time, which leads the appearance of the conductor-like behaviour in ZTO semiconductor. In the present case, the conductivity changes over six orders of magnitude, from ~ 10−7 to 0.92/Ω/cm. After UV exposure, the ZTO compound can potentially remain in the conducting state for up to a month. The underlying physics of the observed PPC effect is investigated by studying defects (deep states and tail states) by employing a discharge current analysis (DCA) technique. Findings from the DCA study reveal direct evidence for the involvement of sub-bandgap tail states of the ZTO in the strong PPC, while deep states contribute to mild PPC.
登录
查看更多内容
影响因子：
4.6
作者：
Kim, Hyun-Suk;Jeon, Sang Ho;Park, Joon Seok;Kim, Tae Sang;Son, Kyoung Seok;Seon, Jong-Baek;Seo, Seok-Jun;Kim, Sun-Jae;Lee, Eunha;Chung, Jae Gwan;Lee, Hyungik;Han, Seungwu;Ryu, Myungkwan;Lee, Sang Yoon;Kim, Kinam
通讯作者：
Kim, Kinam
影响因子：
4
作者：
Goerrn, P.;Lehnhardt, M.;Kowalsky, W.
通讯作者：
Kowalsky, W.
影响因子：
4.6
作者：
Jung, Ukjin;Lee, Young Gon;Lee, Byoung Hun
通讯作者：
Lee, Byoung Hun
影响因子：
41.2
作者：
Jeon, Sanghun;Ahn, Seung-Eon;Kim, Kinam
通讯作者：
Kim, Kinam
影响因子：
3.4
作者：
Kim, Chul Ho;Rim, You Seung;Kim, Hyun Jae
通讯作者：
Kim, Hyun Jae