Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction
Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction
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通过高分辨率 X 射线衍射测定弯曲 GaN 层的倾斜角和扭转角
DOI：
10.1088/0268-1242/24/12/125007
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发表时间：
2009-12
影响因子：
1.9
通讯作者：
中科院分区：
文献类型：
--
作者：
用x射线摇摆曲线的半最大值全宽度（FWHM）作为确定氮化镓层倾斜和扭转角的参数。然而，当GaN脱毛层的厚度达到几微米时，由于曲率引起的峰展宽变得不可忽略。本文系统地研究了利用（0 0 l）， l = 2,4,6， XRC来最小化晶圆曲率的影响。提出了在Williamson-Hall图不适合的情况下确定GaN弯曲层倾斜角度的方法。结果表明，（0 0 6）XRC-FWHM对于制备半径曲率r小于3.5 m的高质量GaN层具有显著的优势。此外，还提出了一种获得可靠倾斜角度的外推方法，对于r < 2 m的晶体，与（0 0 6）XRC-FWHM相比，计算误差可提高10%。在歪斜几何中，我们证明了（2 0 4）XRC-FWHM得到的扭转角与明显弯曲样品的掠入射面内衍射（IP-GID）方法得到的扭转角是一致的。
The full-width at half-maximum (FWHM) of an x-ray rocking curve (XRC) has been used as a parameter to determine the tilt and twist angles of GaN layers. Nevertheless, when the thickness of GaN epilayer reaches several microns, the peak broadening due to curvature becomes non-negligible. In this paper, using the (0 0 l), l = 2, 4, 6, XRC to minimize the effects of wafer curvature was studied systematically. Also the method to determine the tilt angle of a curved GaN layer was proposed while the Williamson–Hall plot was unsuitable. It was found that the (0 0 6) XRC-FWHM had a significant advantage for high-quality GaN layers with the radius curvature of r less than 3.5 m. Furthermore, an extrapolating method of gaining a reliable tilt angle has also been proposed, with which the calculated error can be improved by 10% for r < 2 m crystals compared with the (0 0 6) XRC-FWHM. In skew geometry, we have demonstrated that the twist angles deriving from the (2 0 4) XRC-FWHM are in accord with those from the grazing incidence in-plane diffraction (IP-GID) method for significantly curved samples.
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影响因子：
3.2
作者：
Chierchia, R;Böttcher, T;Hommel, D
通讯作者：
Hommel, D
影响因子：
6.1
作者：
U. Pietsch
通讯作者：
U. Pietsch
DOI：
10.1557/s109257830000017x
发表时间：
2001
期刊：
Mrs Internet Journal of Nitride Semiconductor Research
影响因子：
--
作者：
Yingguo Shi;B. Liu;Lianghong Liu;J. Edgar;E. A. Payzant;J. Hayes;M. Kuball
通讯作者：
Yingguo Shi;B. Liu;Lianghong Liu;J. Edgar;E. A. Payzant;J. Hayes;M. Kuball
DOI：
10.1557/s1092578300000260
发表时间：
2001
期刊：
Mrs Internet Journal of Nitride Semiconductor Research
影响因子：
--
作者：
R. Davis;T. Gehrke;K. Linthicum;P. Rajagopal;A. Roskowski;T. Zheleva;E. Preble;C. Zorman;M. Mehregany;U. Schwarz;J. Schuck;R. Grober
通讯作者：
R. Davis;T. Gehrke;K. Linthicum;P. Rajagopal;A. Roskowski;T. Zheleva;E. Preble;C. Zorman;M. Mehregany;U. Schwarz;J. Schuck;R. Grober
影响因子：
3.1
作者：
Eastman, LF;Mishra, UK
通讯作者：
Mishra, UK