Controlled monolayer self-assembly process based on the atomic force microscopy nanoscratching method
Controlled monolayer self-assembly process based on the atomic force microscopy nanoscratching method
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基于原子力显微镜纳米划痕法的可控单层自组装过程
DOI：
10.1116/1.3072886
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发表时间：
2009-05
影响因子：
1.4
通讯作者：
Dong, S.
中科院分区：
文献类型：
--
作者：
Pan, B.;Yan, Y. D.;Sun, T.;Zhao, J. W.;Dong, S.
将原子力显微镜（AFM）的机械纳米划痕方法与硅（111）表面的自组装过程相结合，形成了一种新的制备方法：用AFM金刚石针尖在样品表面划痕，形成尺寸为几微米的复杂结构。然后将相同的样品浸入十六烷溶液中并加热至200 ° C约2小时。最后，自组装单分子膜在除划痕区域外的所有样品表面上形成。X射线光电子能谱分析的结果验证了在硅表面上的单分子层的形成。利用原子力显微镜研究了样品的摩擦、粘附等力学性能。结果表明，划痕后的硅表面比自组装单层表面具有更大的摩擦力和附着力。
The atomic force microscopy (AFM)-based mechanical nanoscratching method is employed to be integrated with self-assembly process on the surface of silicon (111) forming a novel fabricating approach: An AFM diamond tip is used to scratch the sample surface, forming complex structures with dimensions of several microns. Then the same sample is immersed into the hexadecane solution and heated to 200°C for about 2h. Finally, self-assembly monolayer is formed on all sample surfaces except the scratched area. Results of x-ray photoelectron spectroscopy analysis verify the formation of monolayer on the silicon surface. Mechanical properties of the sample such as friction and adhesive behaviours are studied by AFM. Results show that the scratched silicon surface has a larger friction force and adhesion force than the self-assembly monolayer area.
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影响因子：
3.9
作者：
Yit-Yian Lua;T. L. Niederhauser;B. Wacaser;I. Mowat;A. Woolley;Robert C. Davis;H. Fishman;M. Linford
通讯作者：
Yit-Yian Lua;T. L. Niederhauser;B. Wacaser;I. Mowat;A. Woolley;Robert C. Davis;H. Fishman;M. Linford
影响因子：
3.9
作者：
S. Brandow;Mu‐San Chen;Tina Wang;C. Dulcey;J. Calvert;J. F. Bohland;G. S. Calabrese;W. Dressick
通讯作者：
S. Brandow;Mu‐San Chen;Tina Wang;C. Dulcey;J. Calvert;J. F. Bohland;G. S. Calabrese;W. Dressick
影响因子：
1.6
作者：
Lloyd W. Zilch;G. Husseini;Yit-Yian Lua;Michael V. Lee;Kevin R. Gertsch;Bennion R. Cannon;R. Perry;Eric T. Sevy;M. Asplund;A. Woolley;M. Linford
通讯作者：
Lloyd W. Zilch;G. Husseini;Yit-Yian Lua;Michael V. Lee;Kevin R. Gertsch;Bennion R. Cannon;R. Perry;Eric T. Sevy;M. Asplund;A. Woolley;M. Linford
影响因子：
2.7
作者：
V. Koinkar;B. Bhushan
通讯作者：
V. Koinkar;B. Bhushan
影响因子：
4
作者：
Wacaser, BA;Maughan, MJ;Davis, RC
通讯作者：
Davis, RC