Using run-time reverse-engineering to optimize DRAM refresh
Using run-time reverse-engineering to optimize DRAM refresh
复制标题
使用运行时逆向工程来优化 DRAM 刷新
DOI:
10.1145/3132402.3132419
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发表时间:
2017
期刊:
影响因子:
--
通讯作者:
N. Wehn
中科院分区:
文献类型:
--
作者:
D. M. Mathew;É. F. Zulian;M. Jung;K. Kraft;C. Weis;B. Jacob;N. Wehn
The overhead of DRAM refresh is increasing with each density generation. To help offset some of this overhead, JEDEC designed the modernAuto-Refreshcommand with a highly optimized architecture internal to the DRAM---an architecture that violates the timing rules external controllers must observe and obey during normal operation. Numerous refresh-reduction schemes manually refresh the DRAM row-by-row, eliminating unnecessary refreshes to improve both energy and performance of the DRAM. However, it has been shown that modernAuto-Refreshis incompatible with these schemes, that their manual refreshing of specified rows through explicitActivateandPrechargeprecludes them from exploiting the architectural optimizations available internally forAuto-Refreshoperations.This paper shows that various DRAM timing parameters, which should be followed during normal DRAM operations can be reduced for performingRefreshoperation, and by reverse engineering those internal timing parameters at system-init time an external memory controller can use them in conjunction with individualActivateandPrechargecommands, thereby reducing the performance overhead affordedAuto-Refresh, while simultaneously supporting row-by-row refresh reduction schemes.Through physical experiments and measurement, we find that our optimized scheme reducestRFCby up to 45% compared to the already highly-optimizedAuto-Refreshmechanism. It is also 10% more energy-efficient and 50% more performance-efficient than the non-optimized row-by-row refresh. Further evaluations done by simulating future 16 Gb DDR4 devices show how the reduction intRFCimproves the application performance and energy efficiency. The proposed technique enhances all of the existing refresh-optimization schemes that use row-by-row refresh, and it does so without requiring any modification to the DRAM or DRAM protocol.
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影响因子:
3.7
作者:
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通讯作者:
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影响因子:
2
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通讯作者:
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DOI:
--
发表时间:
2015
期刊:
International Conference / Workshop on Embedded Computer Systems: Architectures, Modeling and Simulation
影响因子:
--
作者:
Omar Naji;C. Weis;Matthias Jung;N. Wehn;Andreas Hansson
通讯作者:
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DOI:
--
发表时间:
2015
期刊:
Science China Information Sciences
影响因子:
--
作者:
Danfeng Zhu;Rui Wang;Yanjiang Wei;D. Qian
通讯作者:
D. Qian
DOI:
10.1109/hpca.2016.7446093
发表时间:
2016-03
期刊:
2016 IEEE International Symposium on High Performance Computer Architecture (HPCA)
影响因子:
--
作者:
Xianwei Zhang;Youtao Zhang;B. Childers;Jun Yang
通讯作者:
Xianwei Zhang;Youtao Zhang;B. Childers;Jun Yang