Evaluation of LEC and VGF-InAs substrates through surface defect characterization and epitaxy growth
Evaluation of LEC and VGF-InAs substrates through surface defect characterization and epitaxy growth
复制标题
通过表面缺陷表征和外延生长评估 LEC 和 VGF-InAs 衬底
DOI：
10.1016/j.mssp.2020.105624
复制
发表时间：
2021-04
影响因子：
4.1
通讯作者：
Guiying Shen
中科院分区：
文献类型：
--
作者：
Lijie Liu;Youwen Zhao;Yong Huang;Yu Zhao;Hui Xie;Jun Wang;Yingli Wang;Guiying Shen
对液封直拉法(LEC)和垂直温度梯度冷冻法(VGF)制备的非掺杂InAs(100)衬底晶片的外延状态进行了研究和比较。采用表面扫描仪、能谱仪、全反射X射线荧光光谱仪对衬底表面缺陷进行了分析，对比了LEC-InAs衬底和VGF-InAs衬底的表面缺陷。结果表明，与LEC晶片相比，VGF晶片具有更低的表面点缺陷和更好的化学计量比。VGF-InAs比LEC-InAs更有利于氧化物的热脱附和低缺陷密度的中波红外(MWIR)外延层生长。
Undoped InAs (100) substrate wafers prepared by liquid encapsulated Czochralski (LEC) and vertical temperature gradient freezing (VGF) methods have been studied and compared in their epi-ready state. The substrate surface defects have been analyzed by surface scanner KLA candela, Energy Dispersive X-Ray Spectroscopy (EDAX), Total-reflection X-ray fluorescence spectroscopy (TXRF), with an aim to find the contrast between LEC-InAs and VGF-InAs substrates. It is found that the VGF wafers have lower surface point defects and good stoichiometry compared with the LEC-wafer. VGF-InAs is more favorable to LEC-InAs for oxide thermal desorption and midwavelength infrared(MWIR)epitaxial layer growth with low defect density.
登录
查看更多内容
Mn掺杂p型InAs单晶中的杂质能带传导
影响因子：
4.1
作者：
Shen Guiying;Zhao Youwen;Bai Yongbiao;Yu Ding;Liu Jingming;Xie Hui;Dong Zhiyuan;Yang Jun;Yang Fengyun;Wang Fenghua
通讯作者：
Wang Fenghua
DOI：
10.1116/1.4978389
发表时间：
2017-03
期刊：
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
影响因子：
--
作者：
D. Sidor;G. Savich;B. Marozas;X. Du;Trevor A. O'Loughlin;G. Jenkins;William D. Hughes;C. Morath;V. Cowan;G. Wicks
通讯作者：
D. Sidor;G. Savich;B. Marozas;X. Du;Trevor A. O'Loughlin;G. Jenkins;William D. Hughes;C. Morath;V. Cowan;G. Wicks
DOI：
10.1016/c2016-0-01001-x
发表时间：
2018
期刊：
--
影响因子：
--
作者：
W. Kern;K. Reinhardt
通讯作者：
W. Kern;K. Reinhardt
影响因子：
5.1
作者：
Zhao Youwen;Sun Wenrong;Duan Manlong;Dong Zhi-yuan;Yang Zixiang;Lü Xuru;Wang Yingli
通讯作者：
Zhao Youwen;Sun Wenrong;Duan Manlong;Dong Zhi-yuan;Yang Zixiang;Lü Xuru;Wang Yingli
影响因子：
3.2
作者：
C. Kaspari;M. Pristovsek;W. Richter
通讯作者：
C. Kaspari;M. Pristovsek;W. Richter